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Department of Electrical Engineering, Hiroshima University | 論文
- Scanning Tunneling Microscopy Observation on the Atomic Structures of Step Edges and Etch Pits on a NH_4F-Treated Si(111) Surface
- Amorphous Silicon Static Induction Transistor
- High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits
- High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips
- Single-Chip Integration of Light-Emitting Diode, Waveguide and Micrormirrors
- Fabrication and Evaluation of Three-Dimensional Optically Coupled Common Memory
- Electron Tunneling through Ultrathin Gate Oxide Formed on Hydrogen-Terminated Si(100) Surfaces
- Atomic Scale Flatness of Chemically Cleaned Silicon Surfaces Studied by Infrared Attenuated-Total-Reflection Spectroscopy
- BF^+_2 Ion Implantation into Very-Low-Temperature Si Wafer
- Chemical Stability of HF-Treated Si(111) Surfaces
- The Role of Fluorine Termination in the Chemical Stability of HF-Treated Si Surfaces
- Chemical Bonding Features of Fluorine and Boron in BF^+_2 -Ion-Implanted Si
- In-Depth Profiling of Suboxide Compositions in the SiO_2/Si Interface by Angle-Resolved X-Ray Photoelectron Spectroscopy
- Modeling of Soft Breakdown in Ultrathin Gate Oxides
- Determination of Bandgap and Energy Band Alignment for High-Dielectric-Constant Gate Insulators Using High-Resolution X-ray Photoelectron Spectroscopy
- Analytical Modelling of Quasi-Breakdown of Ultrathin Gate Oxides under Constant Current Stressing
- Quantitative Analysis of Tunneling Current through Ultrathin Gate Oxides
- Phonon Interaction in the Luminescence of Porous Silicon
- Reabsorption of Visible Luminescence in Porous Si
- Visible Photoluminescence from Porous Silicon