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Department of Electrical Engineering, Hiroshima University | 論文
- Structural Inhomogeneity in Hydrogenated Amorphous Silicon in Relation to Photoelectric Properties and Defect Density
- Deposition of Hydrogenated Amorphous Silicon under Intermittent Substrate Bias
- In Situ Monitoring of Silicon Surfaces During Reactive Ion Etching
- Correlation between Light-Induced Degradation and Structural Inhomogeneities in Hydrogenated Amorphous Silicon Prepared under High-Rate Deposition Conditions
- Calculation of Subband States in a Metal-Oxide-Semiconductor Inversion Layer with a Realistic Potential Profile
- Analytical Modeling of Metal Oxide Semiconductor Inversion-Layer Capacitance
- Quasibound States of Electric Field-Induced Quantum Wells in Silicon Subsurface
- Quantitative Evaluation of Dopant Loss in 5-10 keV As Ion Implantation for Low-Resistive, Ultrashallow Source/Drain Formation
- Optically Interconnected Kohonen Net for Pattern Recognition
- High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips
- An Inhibitor of VCAM-1 Expression and Its Implication as a Novel Treatment of Inflammatory Diseases
- Carpal tunnel syndrome grading system in rheumatoid arthritis
- Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
- Resonant Tunneling through SiO_2/Si Quantum Dot/SiO_2 Double Barrier Structures
- Fine SiO_2 Pattern Generation by Electron Beam Direct Writing onto Polysiloxene-Based Thin Films and Its Application to Etch Mask
- Real-Timte Monitoring of Surface Reactions during Plasma-Enhanced CVD of Silicon
- Fine SiO_2 Pattern Generation by Excimer Laser-Induced Modification of Polysiloxene-Based Thin Films
- Sub-Half-Micron Silicon Pattern Generation by Electron Beam Direct Writing on Polysilane Films
- Exciton Structure in Alkali-Halide Crystals
- Electronic Structure of the Organic Superconductor k-(BEDT-TTF)_2Cu(NCS)_2 Studied by Angle-Resolved Photoemission Spectroscopy