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Department Of Physics Brain Korea 21 Physics Research Division Institute Of Basic Science And Center | 論文
- Photoluminescence and Electroluminescence from Polymer-Like Organic Thin Films Deposited by Plasma-Enhanced Chemical Vapor Deposition Using Para-Xylene as Precursor
- Formation of Reliable HfO_2/HfSi_xO_y Gate-Dielectric for Metal-Oxide-Semiconductor Devices
- Structural and electrical properties of HfO_2/Hf-silicate/Si structures by rf magnetron sputtering
- Structural and electrical properties of HfO_2/Hf-silicate/Si structures by rf magnetron sputtering
- Thickness Dependent Dielectric Property of BaTi0_3/SrTiO_3 Artificial Lattice
- Relationship between C=C Bonds and Mechanical Properties of Carbon Rich Low-k Films deposited by Plasma Enhanced Chemical Vapor Deposition
- The Hysteresis Caused by Interface Trap and Anomalous Positive Charge in Al/CeO_2-SiO_2/Silicon Capacitors
- Diffusion Barrier Characteristics of Hf(C, N) Thin Films Deposited by Plasma Enhanced Metal Organic Chemical Vapor Deposition for Cu Metallization
- Characteristics under Bias-Temperature-Stress of Cu/Low-k a-SiCO: H Structures Prepared by Plasma Enhanced Chemical Vapor Deposition Using a Hexamethyldisilane Precursor and Cu Sputtering
- Effects of Post-Deposition Heat Treatment on the Properties of Low Dielectric Constant Plasma Polymerized Decahydronaphthalene Thin Films Deposited by Plasma-Enhanced Chemical Vapor Deposition
- Lifetime property of flexible organic light emitting diodes with plasma polymer barrier layers
- Effects of N_2 Plasma Treatment of the Al Bottom Cathode on the Characteristics of Top-Emission-Inverted Organic-Light-Emitting Diodes
- Effects of NH_3 Plasma Treatment of the Substrate on Metal Organic Chemical Vapor Deposition of Copper Films
- Enhancement of Selective Chemical Vapor Deposition of Copper by Nitrogen Plasma Pretreatment
- Effect of Annealing Temperature on Dielectric Constant and Bonding Structure of Low-k SiCOH Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition
- Characteristics of polymer light emitting diodes with the LiF anode interfacial layer
- Properties of Low-k (k-2.05) Plasma Polymer Films Deposited by PECVD Using Decamethyl-cyclopentasiloxane and Cyclohexane as the Precursors
- Properties of Low-k (k-2.05) Plasma Polymer Films Deposited by PECVD Using Decamethyl-cyclopentasiloxane and Cyclohexane as the Precursors
- Effects of Deposition Pressure on the Properties of a Low-Dielectric Constant Cyclohexane-based Plasma Polymer
- Optical Properties of Polymer-like Organic Thin Films Deposited by Plasma-Enhanced Chemical Vapor Deposition Using Toluene as the Precursor