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Department Of Electronics Faculty Of Engineering Hiroshima University | 論文
- Ashing Properties in a Surface-Wave Mode Plasma with a Quartz Window
- Surface Wave Plasma Production Employing High Permittivity Material for Microwave Window : Nuclear Science, Plasmas, and Electric Discharges
- Ashing Properties in a Surface-Wave Mode Plasma with a High-Permittivity Alumina Window : Semiconductors
- Oxygen Microwave Plasma Density Enhancement by Surface Waves with a High-Permittivity Material Window
- Production of Large-Diameter Microwave Plasma with a High-Permittivity Material Window
- Negative Ion Assisted Silicon Oxidation in Downstream of Microwave Plasma
- Measurement of Fluorocarbon Radicals Generated from C_4F_8/H_2 Inductively Coupled Plasma : Study on SiO_2 Selective Etching Kinetics
- RF Selfbias Voltage and Sheath Width in Inductively Coupled Chlorine Plasma
- Microloading Effect in Highty Selective Si0_2 Contact Hole Etching Employing Inductively Coupled Plasma
- Effect of Magnetic Field to Etching Characteristics of Inductively Coupled Plasma ( Plasma Processing)
- High Rate and Highly Selective SiO_2 Etching Employing Inductively Coupled Plasma
- RF Self-Bias Characteristics in Inductively Coupled Plasma
- Al Etching Characteristics Ernploying Helicon Wave Plasma
- Si Etching Employing Steady-State Magnetron Plasma with Magnet at Anode Centered in a Cylindrical Reactor
- Compact Electron Cyclotron Resonance Plasma-Etching Reactor Employing Permanent Magnet : Etching
- Compact Electron Cyclotron Resonance Plasma-Etching Reactor Employing Permanent Magnet
- Si Etching with Low Ion Energy in Low-Pressure Electron Cyclotron Resonance Plasma Generated by Longitudinal and Multipole Magnetic Fields
- High Etch Rate Modes in Microwave Plasma Etching of Silicon in High Magnetic Fields : Etching and Deposition Technology
- High Etch Rate Modes in Microwave Plasma Etching of Silicon in High Magnetic Fields
- Enhancement of Negative-Ion-Assisted Silicon Oxidation by Radio-Frequency Bias