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Department Of Electronics Engineering And Institute Of Electronics National Chiao-tung University | 論文
- Improved Retention Characteristic in Polycrystalline Silicon--Oxide--Hafnium Oxide--Oxide--Silicon-Type Nonvolatile Memory with Robust Tunnel Oxynitride
- Comparison of the Characteristics of Polyoxides Grown by Thermal, Rapid Thermal Oxidation, and Tetraethylorthosilicate Deposition Methods
- Influence of Sheet Resistance on N_2O-Grown Polyoxide
- Electrical Characterization and Dielectric Properties of Metal–Oxide–Semiconductor Structures Using High-$\kappa$ CeZrO4 Ternary Oxide as Gate Dielectric
- Formation Behavior of High-T_c Tl-based Superconductors
- Analysis and Implementation of Proportional Current Feedback Technique for Digital PWM DC-DC Converters(Electronic Circuits)
- Electron Paramagnetic Resonance and Luminescence Study of Sol-Gel Derived YAG:Cr Powder
- A-Axis YBCO Thin Films Deposited by DC Magnetron Sputtering
- The Characteristics of Polysilicon Oxide Grown on Amorphous Silicon Deposited from Disilane
- Improved Low Temperature Characteristics of Raised Source and Drain (RSD) Si_Ge_x PMOSFET's
- Effects of Base Oxide Thickness and Silicon Composition on Charge Trapping in HfSiO/SiO2 High-$k$ Gate Stacks
- Analysis and Implementation of Proportional Current Feedback Technique for Digital PWM DC-DC Converters
- The Reliability Improvements of Carbon Nanotubes Emitters by Utilizing an Fe–Ti Codeposited Catalyst
- The Effect of the Growth Temperature on Polyoxide by Rapid Thermal Processing
- Effect of TiN Substrate Plasma Treatment on Copper Chemical Vapor Deposition
- Robust Ultrathin Oxynitride with High Nitrogen Diffusion Barrier near its Surface Formed by NH3 Nitridation of Chemical Oxide and Reoxidation with O2
- A Quasi-Planar Thin Film Field Emission Diode
- Improved Field-Emission Properties of Carbon Nanotube Field-Emission Arrays by Controlled Density Growth of Carbon Nanotubes
- Growth and Field Emission Characteristics of Carbon Nanotubes Using Co/Cr/Al Multilayer Catalyst
- Physical and Barrier Properties of Plasma Enhanced Chemical Vapor Deposition $\alpha$-SiC:N:H Films