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Department Of Electrical Engineering National Central University | 論文
- Improvement of External Quantum Efficiency in InGaN-Based Double-Heterostructure Light-Emitting Diodes
- Optoelectronic Parametric Amplification in a Microstrip Ring Resonator on GaAs Substrate
- A Novel Power MOSFET Structure with Shallow Junction Dual Well Design(Compound Semiconductor and Power Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
- High Current, High Power, and High Linearity Ohmic Recess InGaP/InGaAs Doped Channel FETs(Session 7B Compound Semiconductor Devices III,AWAD2006)
- High Current, High Power, and High Linearity Ohmic Recess InGaP/InGaAs Doped Channel FETs(Session 7B Compound Semiconductor Devices III)
- High Current, High Power, and High Linearity Ohmic Recess InGaP/InGaAs Doped Channel FETs
- High Performance Power MOSFETs by Wing-Cell Structure Design(Si Devices and Processes,Fundamental and Application of Advanced Semiconductor Devices)
- High Performance Power MOSFETs by Wing-cell Structure Design (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- High Performance Power MOSFETs by Wing-cell Structure Design (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- InP/InGaAs Leaky Waveguide Photodiode with a Partially p-Doped Absorption Layer and a Distributed-Bragg-Reflector (DBR) for High-Power and High-Bandwidth-Responsivity Product Performance
- InP/InGaAs Partially p-Doped Photodiode with Leaky Optical Waveguide and Distributed Bragg Reflectors for High-Saturation-Current and High-Bandwidth-Responsivity Product
- Improvement of Mesa-Sidewall Leakage Current Using Benzocyclobuten Sidewall Process in InGaAs/InP MSM Photodetector
- Reduced Mesa-Sidewall Leakage Current in InGaAs/InP MSM Photodetector by BCB Sidewall Process
- Platform-Based Design for the Low Complexity and High Performance De-Interlacing System
- Improvement of Current Injection of Porous Silicon
- Improving the Transient Response of a Si Metal-Semiconductor-Metal Photodetector with an Additional i-a-SiGe:H Film
- Improving Transient Response of Si Metal-Semiconductor-Metal Photodetector with an Additional i-a-SiGe Film
- Improvement of Current Injection of Porous Silicon
- Effects of Dielectrics on the Characteristics of Large-Area Silicon Microstrip Sensors
- Double Graded-Gap Hydrogenated Amorphous Silicon Carbide Thin-Film Light-Emitting Diode with Composition-Graded N Layer and Carbon-Increasing P Layer