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Department Of Electrical Engineering And Institute Of Microelectronics National Cheng Kung Universit | 論文
- The Impact of Gate-to-Source Tunneling Current on the Characterization of Metal-Oxide-Semiconductor Field-Effect Transistor's Hot-Carrier Reliability
- GaN and InGaN Metal-Semiconductor-Metal Photodetectors with Different Schottky Contact Metals
- Characteristics of Copper Indium Diselenide Thin Films Formed on Flexible Substrates by Electrodeposition
- PCR-RFLP法を用いた市販のイヌ用飼料およびネコ用飼料の肉成分検査(公衆衛生学)
- BCl_3/Ar Plasma-Induced Surface Damage in GaInP/InGaAs/GaInP Quantum-Well High-Electron-Mobility Transistors
- Direct Growth of $a$-Plane GaN on $r$-Plane Sapphire by Metal Organic Chemical Vapor Deposition
- Photoreflectance and C-V Measurement Investigations of Dry Etched Gate Recesses for GaInP/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistors (HEMTs) Using BCl_3 /Ar Plasma
- The Layout Geometry and Power-Level Dependences of Degradation in Complementary Metal–Oxide–Semiconductor RF Power Cells from Hot-Carrier Stress with Load Pull System
- Improvement in $a$-Plane GaN Crystal Quality by Investigating Different Buffer Layer
- Structure of Silicene Grown on Ag(111)
- Hematocrit and Plasma Chemistry Values in Adult Collared Scops Owls (Otus lettia) and Crested Serpent Eagles (Spilornis cheela hoya)
- Effect of AlGaN Si-Doped Barrier Layer on Optical Properties of Ultraviolet Light-Emitting Diodes
- Heterostructure Fe:InP/InGaAs Metal-Semiconductor Field-Effect Transistors Grown by Metalorganic Chemical Vapor Deposition
- Electrical Properties of High-Quality Stacked CdTe/Photo-Enhanced Native Oxide for HgCdTe Passivation
- InGaN/GaN Light Emitting Diodes with a Lateral Current Blocking Structure
- Improvement of AlGaInP Multiple-Quantum-Well Light-Emitting Diodes by Modification of Ohmic Contact Layer
- Simulation and Fabrication of InGaP/Al0.98Ga0.02As/GaAs Oxide-Confined Collector-Up Heterojunction Bipolar Transistors
- Fabrication of Oxide-Confined Collector-Up Heterojunction Bipolar Transistors
- Growth of Be-doped p-type GaN under Invariant Polarity Conditions
- Optical Transitions in a Self-Assembled Ge Quantum Dot/Si Superlattice Measured by Photoreflectance Spectroscopy