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Department Of Electrical And Electronics Engineering Nippon Institute Of Technology | 論文
- Enhanced Thermal Oxidation of Silicon in Steam Ambient by UV-Irradiation
- Low-Temperature Oxidation of Silicon in Dry O_2 Ambient by UV-lrradiation
- Fabrication of Carbon Nanotubes and Byproducts by Arc Discharge in DC Motors
- Low-Temperature Oxidation of Silicon in H_2O_2 Ambient by UV Irradiation (Short Note)
- Synthesis of Multiwalled Carbon Nanotubes at Temperatures below 300°C by Hot-Filament Assisted Chemical Vapor Deposition
- Low-Temperature Thermal Oxidation of Silicon in N_2O by UV-Irradiation
- The Enhanced Electroplating of Nickel by UV-Irradiation before Plating Step
- Solutions of Simultaneous Equations for Oxidation Enhanced and Retarded Diffusions and Oxidation Stacking Fault in Silicon
- Relationship between transition boundary to gaseous phase and spectrum intensity in Ag break arc
- Relationship between gaseous phase transition and bridge phenomena in Ag,Pd break arc (国際セッションIS-EMD2002〔英文〕)
- Relationship between transition boundary to gaseous phase and spectrum intensity in Ag break arc (国際セッションIS--EMD 2003) -- (Session 4 Arc discharges and related phenomena)
- The Enhanced and Suppressed Electroless Plating of Copper by UV-Irradiation : Chemistry (incl. physical process)
- Growth of Single-Walled Carbon Nanotubes by Hot-Filament Assisted Chemical Vapor Deposition below 500 °C
- Effect of Tungsten on Synthesis of Multiwalled Carbon Nanotubes Using Cobalt as Catalyst
- Enhanced Thermal Oxidation of Silicon by UV-Irradiation
- Effects of Hydrogen Radical Treatment on Fabrication of Catalyst Nanoparticles from Metal Oxide Film at Low Temperature and Synthesis of Silicon Nanowires
- The Enhanced Diffusion of Low-Concentration Phosphorus, Arsenic and Boron in Silicon during IR-Heating
- Thermal Oxidation of Antimony-Doped Silicon (Short Note)
- Fabrication of metal nanoparticles as catalyst at low temperature and growth of silicon nanostructures
- Erratum: "Synthesis of Multiwalled Carbon Nanotubes at Temperatures below 300 °C by Hot-Filament Assisted Chemical Vapor Deposition"