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Central Research Laboratory, Hitachi, Ltd | 論文
- Mechanism of E' Center Generation in SiO_2 Film by Ion and Neutral Beam Bombardment : Beam Induced Physics and Chemistry
- Mechanism of E' Center Generation in SiO_2 Film by Ion and Neutral Beam Bombardment
- Positive Charges and E' Centers Formed by Vacuum Ultraviolet Radiation in SiO_2 Grown on Si : Beam-Induced Physics and Chemistry
- Positive Charges and E' Centers Formed by Vacuum Ultraviolet Radiation in SiO_2 Grown on Si
- Mechanism of CF Polymer Film Deposition through High-Aspect-Ratio SiO_2 Holes
- Observation of Fine Compositional Fluctuation in GaAs/AI_xGa_As Superstructure Using Composition Analysis by Thickness-Fringe (CAT) Method
- Simple Calculation on Topography of Focused-Ion-Beam Sputtered Surface
- Depth Profiling of Superstructures by μ-AES Utilizing Angle-Lapped Specimens: Techniques, Instrumentations and Measurement
- Broadband Local Network Evolution to All-Optical Implementation
- Application of Characteristic Secondary Ion Mass Spectra to a Depth Analysis of Iron Aluminum Oxide
- Fabrication of Deep Sub-$\mu$m Narrow-Channe1 Si-MOSFET's with Twofold-Gate Structures