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Central Research Laboratory, HITACHI, Ltd. | 論文
- A Method of Measuring Lifetime for Minority Carriers Induced by an Electron Beam in Germanium
- Thermal Characteristics of Si Mask for EB Cell Projection Lithography
- Role of Ion Bombardment in Field Emission Current Instability
- Characterization of Laser-Induced Epitaxial Si Crystal by Evaluating MOSFET's Fabricated in Grown Layers : A-6: SILICON CRYSTALS
- Low Temperature Annealing Characteristics of Phosphorus-Implanted Silicon : A-3: DEVICE TECHNOLOGY (III)
- Nanofabrication with Langmuir-Blodgett Films of a Chemical Amplification Resist SAL601
- Formation of Fractionated Novolak Resin Langmuir-Blodgett Films
- Fabrication of 0.1μm Complementary Metal-Oxide-Semiconductor Devices : Micro/nanofabrication and Devices
- Fabrication of 0.1μm Complementary Metal-Oxide-Semiconductor Devices
- Integrated Radiation Detectors with a-Si Photodiodes on Ceramic Scintillators
- Nondestructive Depth Profile Analysis by Changing Escape Depth of Photoelectrons
- A 500℃ fabrication process for MIM capacitors-based on a Ta_2O_5/Nb_2O_5 bilayer with high permittivity-for DRAM and SoC applications
- Advanced Vectorization Techniques for Supercomputers
- Significance of the Highly Conserved Gly-4 Residue in Human Cystatin A^1
- X-Ray Microprobe with a Pair of Elliptical Mirrors
- Characterization of InGaP/GaAs Heterojunction Bipolar Transistors with a Heavily Doped Base : Semiconductors
- High Performance InP/InGaAs HBTs for 40-Gb/s Optical Transmission ICs (Special Issue on Ultra-High-Speed IC and LSI Technology)
- Fully Strained Heavily Carbon-Doped GaAs Grown by Gas-Source Molecular Beam Epitaxy Using Carbontetrabromide and Its Application to InGaP/GaAs Heterojunction Bipolar Transistors
- A WSi Base Electrode and a Heavily-Doped Thin Base Layer for High-Speed and Low-Power InGaP/GaAs HBTs
- Fully Strained Heavily Carbon-Doped GaAs Using Carbontetrabromide by Gas-Source Molecular Beam Epitaxy and Its Application in InGaP/GaAs Heterojunction Bipolar Transistors