スポンサーリンク
Center for Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan | 論文
- Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots
- High-Quality p-Type ZnO Films Grown by Co-Doping of N and Te on Zn-Face ZnO Substrates
- Fine-Grained Power-Gating Scheme of a Metal–Oxide–Semiconductor and Magnetic-Tunnel-Junction-Hybrid Bit-Serial Ternary Content-Addressable Memory
- The Performance of Magnetic Tunnel Junction Integrated on the Back-End Metal Line of Complimentary Metal–Oxide–Semiconductor Circuits
- Preparation of an Ultraclean and Atomically Controlled Hydrogen-Terminated Si(111)-($1{\times} 1$) Surface Revealed by High Resolution Electron Energy Loss Spectroscopy, Atomic Force Microscopy, and Scanning Tunneling Microscopy: Aqueous NH4F Etching Proc
- Observation of Initial Oxidation on Si(110)-$16\times 2$ surface by Scanning Tunneling Microscopy
- Surface Structural Comparison of Composite Film of Bacteriorhodopsin and Phosphatidylcholine Fabricated on Amorphous Silicon Dioxide, Crystal Silicon Dioxide, and Hydrogenated Amorphous Silicon
- Fabrication Method of Sub-100 nm Metal-Oxide-Semiconductor Field-Effect Transistor with Thick Gate Oxide
- Disturb-Free Three-Dimensional Vertical Floating Gate NAND with Separated-Sidewall Control Gate
- Role of Synthetic Ferrimagnets in Magnetic Tunnel Junctions from Wave Packet Dynamics
- Time-Resolved Switching Characteristic in Magnetic Tunnel Junction with Spin Transfer Torque Write Scheme
- High-Density and Low-Power Nonvolatile Static Random Access Memory Using Spin-Transfer-Torque Magnetic Tunnel Junction
- Multi-Electron Wave Packet Dynamics in Applied Electric Field
- Influence of Isoelectronic Te Doping on the Physical Properties of ZnO Films Grown by Molecular-Beam Epitaxy
- Incubation-Free Growth of Polycrystalline Si Films by Plasma-Enhanced Chemical Vapor Deposition Using Pulsed Discharge under Near Atmospheric Pressure
- Nearly 4-Inch-Diameter Free-Standing GaN Wafer Fabricated by Hydride Vapor Phase Epitaxy with Pit-Inducing Buffer Layer
- Influence of Isoelectronic Te Doping on the Physical Properties of ZnO Films Grown by Molecular-Beam Epitaxy
- New Reconstructions of Platinum Silicide Surface