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Center for Cooperative Research in Advanced Science and Technology, Nagoya University | 論文
- Behavior of Local Current Leakage in Stressed Gate SiO_2 Films Analyzed by Conductive Atomic Force Microscopy
- Detection and Characterization of Stress-Induced Defects in Gate SiO_2 Films by Conductive Atomic Force Microscopy
- Growth of Silicon Nanocrystal Dots with High Number Density by Ultra-High-Vacuum Chemical Vapor Deposition
- Influence of Structural Variation of Ni Silicide Thin Films on Electrical Property for Contact Materials
- Conductive Atomic Force Microscopy Analysis for Local Electrical Characteristics in Stressed SiO_2 Gate Films
- Pulsed Laser Deposition and Analysis for Structural and Electrical Properties of HfO_2-TiO_2 Composite Films
- Microscopic Analysis of Stress-Induced Leakage Current in Stressed Gate SiO_2 Films Using Conductive Atomic Force Microscopy
- Reactive Deposition Epitaxy of CoSi_2 Films on Clean and Oxygen-Adsorbed Si(001) Surfaces
- Surface and Interface Smoothing of Epitaxial CoSi_2 Films by Solid-Phase Epitaxy Using Adsorbed Oxygen Layers and Two-Step Growth on Si(001) Surfaces
- Structural and Electrical Characteristics of HfO_2 Films Fabricated by Pulsed Laser Deposition
- Growth Processes and Electrical Characteristics of Silicon Nitride Films Formed on Si(100) by Radical Nitrogen
- Electrical Properties and Solid-Phase Reactions in Ni/Si(100) Contacts
- Behavior of Local Charge Trapping Sites in La_2O_3-Al_2O_3 Composite Films under Constant Voltage Stress
- Scanning Tunneling Microscopy of Initial Nitridation Processes on Oxidized Si(100) Surface with Radical Nitrogen
- Conductance Oscillations in Low-Dimensional Ion Implanted Regions Annealed by Rapid Thermal Annealing
- Hydrogen Effects on Heteroepitaxial Growth of Ge Films on Si(111) Surfaces by Solid Phase Epitaxy
- Hydrogen Effects on Si_Ge_x/Si Heteroepitaxial Growth by Si_2H_6- and GeH_4-Source Molecular Beam Epitaxy
- Effects of Nitrogen Addition to Microwave Oxygen Plasma in Surface Wave with Disk-Plate Window and Photoresist Ashing
- Growth of Carbon Nanotubes by Microwave-excited Non-Equilibrium Atmospheric-Pressure Plasma
- Measurement of Einstein's A Coefficient of the 296.7 nm Transition Line of the Carbon Atom