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Center for Cooperative Research in Advanced Science and Technology, Nagoya University | 論文
- Local Leakage Current of HfO_2 Thin Films Characterized by Conducting Atomic Force Microscopy
- Initial Oxidation Processes of H-Terminated Si(100) Surfaces Analyzed using a Random Sequential Adsorption Model
- Influences of Impurities on Oxidation Processes of Si(100) Substrates
- Influences of Impurities on Oxidation Processes of Si(100) Substrates
- Growth Processes and Electrical Characteristics of Silicon Nitride Films Formed on Si(100) by Radical Nitrogen
- Microscopic Observation of X-Ray Irradiation Damage in Ultra-Thin SiO_2 Films
- Microscopic Observation of X-Ray Irradiation Damages in Ultra-Thin SiO_2 Films
- CW Laser-Induced Fluorescence Study of SiH_2+ SiH_4 Reaction : Dominance of Two-Body Reaction Channel in Low-Pressure Silane Plasma
- Translational Temperature Measurement for SiH_2 in RF Silane Plasma Using CW Laser Induced Fluorescence Spectroscopy
- Laser-Induced-Fluorescence Study of SiH2 in a RF SiH4/SiH2Cl2 Plasma (レ-ザ-および放射光の半導体プロセス分野への応用特集号)
- Electrical Properties and Solid-Phase Reactions in Ni/Si(100) Contacts
- Structural and Electrical Characteristics of HfO_2 Films Fabricated by Pulsed Laser Deposition
- Coulomb Blockade Phenomena in Si Metal-Oxide-Semiconductor Field-Effect Transistors with Nano-Scale Channels Fabricated Using Focused-Ion Beam Implantation
- Novel Nonvolatile Random-Access Memory with Si Nanocrystals for Ultralow-Power Scheme
- Spatial Distribution Measurement of Absolute Densities of CF and CF_2 Radicals in a High Density Plasma Reactor Using a Combination of Single-Path Infrared Diode Laser Absorption Spectroscopy and Laser-Induced Fluorescence Technique
- Overdamped NbN Josephson Junctions Based on Nb/AlO_x/Nb Trilayer Technology
- Control of Crystal Structure and Ferroelectric Properties of Pb(Zr_xTi_)O_3 Films Formed by Pulsed Laser Deposition
- Atomic-Scale Characterization of Nitridation Processes on Si(100)-$2\times 1$ Surfaces by Radical Nitrogen
- Application of a Two-Step Growth to the Formation of Epitaxial CoSi2 Films on Si(001) Surfaces: Comparative Study using Reactive Deposition Epitaxy
- Atomic Scale Characterization of Nitridation Process on Si(100)-2x1 Surfaces by Radical Nitrogen