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Assoc. Super‐advanced Electronics Technol. (aset) Kanagawa Jpn | 論文
- Electron Diffraction and Microscope Study of Radiation Damage in Ba_2YCu_3O_y
- Crystal Structure of Ba_La_Cu_3O_
- Advanced Surface Modification Resist Process for ArF Lithography
- Sub-100-nm Device Fabrication using Proximity X-Ray Lithography at Five Levels
- X-Ray Mask Distortion Induced in Back-Etching Preceding Subtractive Fabrication: Resist and Absorber Stress Effect
- Highly Sensitive and Stress-Free Chemically Amplified Negative Working Resist, TDUR-N9, for 0.1 μm Synchrotron Radiation (SR) Lithography
- Reduction of X-Ray Irradiation-Induced Pattern Displacement of SiN Membranes Usirng H^+ Ion Implantation Technique
- Ultrahigh-Vacuum Electron Cyclotron Resonance-Plasma Chemical-Vapor-Deposited SiN_x Films for X-Ray Lithography Mask Membrane : As-Deposited Properties and Radiation Stability
- Mask Error Factor in Proximity X-Ray Lithography
- Optimum Phase Condition for Low-Contrast X-Ray Masks
- Development of methanol sensor using a shear horizontal surface acoustic wave device for a direct methanol fuel cell
- Development of temperature-control system for liquid droplet using surface Acoustic wave devices
- Use of a low refractive index prism in surface plasmon resonance biosensing
- I-3 Deposition of thin film based on SAW streaming(Device application (English session))
- P1-27 A study on SAW streaming phenomenon based on temperature measurement and observation of streaming in liquids(Poster session 1)
- High-Performance X-Ray Mask Fabrication Using TaGeN Absorber and Dummy Pattern Method for Sub-100nm Proximity X-Ray Lithography : Instrumentation, Measurement, and Fabrication Technology
- Suppression of Pattern Edge Roughness by Low Ion Strength Developer
- Properties of Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(EtCp)_2 with Tetrahydrofuran Solvent
- Evaluation of Overlay Accuracy for 100-nm Ground Rule in Proximity X-Ray Lithography
- Conformal Platinum Electrodes Prepared by Chemical Vapor Deposition Using a Liquid MeCpPtMe_3 Precursor in an Oxidizing Atmosphere