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Advanced Technology Laboratory Lg Semicon Co. Ltd. | 論文
- Trade-Off between Hot Carrier Effect and Current Driving Capability Due to Drain Contact Structures in Deep Submicron MOSFETs
- Effects of Low Temperature Interlayer Dielectric Films on the Gate Oxide Quality of Deep Submicron MOSFET's
- Effects of Low Temperature Interlayer Dielectric Films on the Gate Oxide Quality of Deep Submicron MOSFET's
- Characterization of the Co-Silicide Penetration Depth into the Junction Area for 0.15 and Sub-0.15 Micron CMOS Technology
- Defects study of retrograde twin well CMOS that has MeV ion implanted buried layer
- Defects study of retrograde twin well CMOS that has MeV ion implanted buried layer
- Characterization of Corner Induced Leakage Current in Shallow Silicided n^+/p Junction
- Characterization of the Co-Silicide Penetration Depth into the Junction Area
- On-Chip Extraction of Interconnect Line Induced Delay Time for Quarter and Sub-Quarter Micron CMOS Technology
- On-Chip Extraction of Interconnect Line Induced Delay Time for Quarter and Sub-Quarter Micron CMOS Technology
- On-Chip Extraction of Interconnect Line Induced Delay Time for Quarter and Sub-Quarter Micron CMOS Technology
- Shallow Trench Isolation Characteristics with High-Density-Plasma Chemical Vapor Deposition Gap-Fill Oxide for Deep-Submicron CMOS Technologies
- Dependence of Subthreshold Hump and Reverse Narrow Channel Effect on the Gate Length by Suppression of Transient Enhanced Diffusion at Trench Isolation Edge
- Dependence of Sub-Threshold Hump and RNWE Characteristics on the Gate Length by TED
- Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length
- Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length
- Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length
- Characterization of Corner-Induced Leakage Current of a Shallow Silicided n^+/p Junction for Quarter-Micron MOSFETs
- Study of Drain Contact Structure Dependent Deep Submicron MOSFET Reliability by Photon Emission Analysis