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Advanced Semiconductor Research Center Division Of Electrical And Computer Engineering Hanyang Unive | 論文
- A design of temperature-compensated complementary metal-oxide semiconductor voltage reference sources with a small temperature coefficient (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- A design of temperature-compensated complementary metal-oxide semiconductor voltage reference sources with a small temperature coefficient (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- A Design of Temperature-Compensated Complementary Metal-Oxide Semiconductor Voltage Reference Sources with a Small Temperature Coefficient
- Optical and Electrical Properties of Si Nanocrystals Embedded in SiO_2 Layers
- Enhancement of the Ferromagnetic Transition Temperature in Self-Assembled (Ga_Mn_x)As Quantum Wires
- Unique Multilevel Flash Memory Devices Operating at High Programming Speed, Designed Utilizing Novel Asymmetric Gates
- Unique Multilevel Flash Memory Devices Operating at High Programming Speed, Designed Utilizing Novel Asymmetric Gates
- Effect of Fullerene Concentration on Flat-Band Voltage Shift of Capacitance–Voltage Curve in Organic Memory Devices Fabricated Using Hybrid Poly(4-vinyl phenol) Active Layer Containing Fullerene
- Efficiency Enhancement and Color Stabilization in Organic Light-Emitting Devices Utilizing a Fullerene–Polymer Composite Layer Acting as a Hole Transport Layer
- Enhanced Pixel-Driving Circuits for Active-Matrix Organic-Light-Emitting Diode Displays with Large Sizes
- Electrical Properties and Operating Mechanisms of Nonvolatile Organic Memory Devices Fabricated Utilizing Hybrid Poly(N-vinylcarbazole) and C60 Composites
- Optical Properties of Self-Assembled ZnO Nanocrystals Embedded in a $ p$-Phenylene Biphenyltetracarboximide Polyimide Layer
- Design and Power Tests of 500 MHz RF Cavity of CW Microtron for Industrial Applications
- Simulation of Nanoscale Two-Bit Not-And-type Silicon–Oxide–Nitride–Oxide–Silicon Nonvolatile Memory Devices with a Separated Double-Gate Fin Field Effect Transistor Structure Containing Different Tunneling Oxide Thicknesses
- Design of Unique NAND Flash Memory Cells with Low Program Disturbance Utilizing Novel Booster Line
- Formation and Characterization of (Zn1-xMnx)O Diluted Magnetic Semiconductors Grown on (0001) Al2O3 Substrates
- Effect of Indium--Tin-Oxide Schottky Contact on the Resistance Switching of NiO Film
- Dependence of Structural and Electrical Properties on Substrate Temperature for Annealed C54 TiSi2 Thin Films Grown on p-Si Substrates
- Optical Properties of Terahertz Wave Emitter Fabricated by Using CdxZn1-xTe Single Crystals
- Effect of Thermal Annealing on Structural, Electrical, and Magnetic Properties of Ag-doped La0.67Ca0.33MnO3 Thin Films Grown on LaAlO3 Substrates