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Advanced Lsi Technology Laboratory Toshiba Corporation | 論文
- Power Consumption of Hybrid Circuits of Single-Electron Transistors and Complementary Metal-Oxide-Semiconductor Field-Effect Transistors
- SET/CMOS Hybrid for Future Low-Power LSI : Experimental Demonstration, Power Estimation, and Strategy for Its Reduction
- Challenge to new silicon devices
- Schottky-Barrier Metal–Oxide–Semiconductor Field-Effect Transistors as Resonant Tunneling Devices
- A Numerical Simulation of Low-Grazing-Angle Scattering from Ocean-Like Dielectric Surfaces
- Ray Tracing Analysis of Large-Scale Random Rough Surface Scattering and Delay Spread
- FVTD Simulation for Random Rough Dielectric Surface Scattering at Low Grazing Angle(Special Issue on Problems of Random Scattering and Electromagnetic Wave Sensing)
- Rough Surface and Delay Spread
- A New Design Scheme for Logic Circuits with Single Electron Transistors
- Study on Zr-Silicate Interfacial Layer of ZrO_2-MIS Structure Fabricated by Pulsed Laser Ablation Deposition Method
- The Relation between Dielectric Constant and Film Composition of Ultra-Thin Silicon Oxynitride Films : Experimental Evaluation and Analysis of Nonlinearity
- Extraction of Interface State Density in Ultra-Thin Gate Dielectrics : A Composition Method of Ideal CV Curves in High-Frequency CV Analysis
- Destruction and Recovery of Superconductivity in Bi-Pb-Sr-Ca-Cu-O Synthesized under High Pressure
- Monte Carlo Simulation of Sub-0.1μm Devices with Schottky Contact Model (Special lssue on SISPAD'99)
- Impact of Electron Heat Conductivity on Electron Energy Flux(the IEEE International Conference on SISPAD '02)
- Successful CMOS Operation of Dopant-Segregation Schottky Barrier Transistors (DS-SBTs)
- New Approach to Negative Differential Conductance with High Peak-to-Valley Ratio in Silicon
- Proposal of Analytical Single-Electron Transistor Model and Its Implication for Realistic Circuit Operation
- Sub-μm Silicon SETs on Self-Undulated Hyper-Thin SOI Films
- Room Temperature Operating CMOS-like Logic Circuits with Single Electron Tunneling Devices