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Advanced Lsi Technology Laboratory Toshiba Corporation | 論文
- Experimental Evidence of Inversion-Layer Mobility Lowering in Ultrathin Gate Oxide MOSFETs with Direct Tunneling Current
- Bandgap Engineering for the Suppression of the Short Channel Effect of sub-0.1um p-channel MOSFETs
- The Effect of Side Traps on Ballistic Transistor in Kondo Regime
- Device Simulations in Coupled Floating-Gate Memories
- Hall Factor in Ultrathin-Body Silicon-on-Insulator n-Type Metal–Oxide–Semiconductor Field-Effect Transistors
- Non-Stoichiometric SixN Metal–Oxide–Semiconductor Field-Effect Transistor for Compact Random Number Generator with 0.3 Mbit/s Generation Rate