Shimaya M | Ntt Telecommunications Energy Laboratories

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概要

• SHIMAYA Masakazuの詳細を見る
• 同名の論文著者
• Ntt Telecommunications Energy Laboratoriesの論文著者

関連著者

• Shimaya M

  Ntt Telecommunications Energy Laboratories

• MACHIDA Katsuyuki

  NTT Advanced Technology Corporation

• Shimoyama Nobuhiro

  Ntt Lifestyle And Environmental Laboratories

• Kyuragi H

  Ntt Microsystem Integration Laboratories Ntt Corporation

• Machida K

  Ntt Advanced Technology Corporation

• Shiono N

  Ntt Lsi Laboratories Nippon Telegraph And Telephone Corporation

• MACHIDA Katsuyuki

  NTT System Electronics Laboratories

• KYURAGI Hakaru

  NTT System Electronics Laboratories

• OGAWA Shigeo

  NTT LSI Laboratories

• Ogawa Shigeo

  Ntt Lsi Laboratories Nippon Telegraph And Telephone Corporation

• SHIMOYAMA Nobuhiro

  NTT System Electronics Laboratories

• SHIMAYA Masakazu

  NTT System Electronics Laboratories

• Shimaya Masakazu

  Ntt Lsi Laboratories

• MACHIDA Katsuyuki

  NTT Telecommunications Energy Laboratories, NTT Corporation

• KYURAGI Hakaru

  NTT Telecommunications Energy Laboratories, NTT Corporation

• Akiya Hideo

  Ntt Telecommunications Energy Laboratories

• SHIMAYA Masakazu

  NTT Telecommunications Energy Laboratories

• Shiono Noboru

  NTT LSI Laboratories, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato Wakamiya,

• SHIONO Noboru

  Reliability Center for Electronic Components of Japan (RCJ)

• Machida Katsuyuki

  NTT Telecommunications Energy Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan

• Kyuragi Hakaru

  NTT Telecommunications Energy Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan

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著作論文

• The Influence of Stud Bumping above the MOSFETs on Device Reliability(Special Section on Reliability Theory and Its Applications)
• Stress-Induced Device Degradation Due to Die-Attachment Process after Area Bump Formation
• Stress-Induced Device Degradation Due to Die-Attach Process after Area Bump Formation
• Impact of Negative-Bias Temperature Instability on the Lifetime of Single-Gate CMOS Structures with Ultrathin (4–6 nm) Gate Oxides
• Impact of Negative-Bias Temperature Instability on the Lifetime of Single-Gate CMOS Structures with Ultrathin(4-6nm)Gate Oxides

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