OGAWA Shigeo | NTT LSI Laboratories
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概要
関連著者
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OGAWA Shigeo
NTT LSI Laboratories
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Shiono N
Ntt Lsi Laboratories Nippon Telegraph And Telephone Corporation
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Ogawa Shigeo
Ntt Lsi Laboratories Nippon Telegraph And Telephone Corporation
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Shimaya M
Ntt Telecommunications Energy Laboratories
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Shimaya Masakazu
Ntt Lsi Laboratories
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小林 孝嘉
東京大学理学系研究科
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Ogawa Shinji
Department Of Electrical And Electronic Engineering And Information Engineering Nagoya University
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Ohsaki Shintaro
Department Of Electrical And Electronic Engineering And Information Engineering Nagoya University
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Nakayama Satoshi
NTT LSI Laboratories
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Kobayashi Toshio
NTT LSI Laboratories
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Sakakibara Y
National Institute Of Advanced Industrial Science And Technology (aist)
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Nakayama S
Sii Nano Technology Inc.
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SAKAKIBARA Yutaka
NTT LSI Laboratories
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Shiono Noboru
NTT LSI Laboratories, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato Wakamiya,
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SHIONO Noboru
Reliability Center for Electronic Components of Japan (RCJ)
著作論文
- Evaluation of Hot-Hole Induced Interface Traps at the Tunneling SiO_2(3.5nm)-Si Interface by the Conductance Technique
- Impact of Negative-Bias Temperature Instability on the Lifetime of Single-Gate CMOS Structures with Ultrathin (4–6 nm) Gate Oxides
- Impact of Negative-Bias Temperature Instability on the Lifetime of Single-Gate CMOS Structures with Ultrathin(4-6nm)Gate Oxides