P-Channel Tunnel Field-Effect Transistors down to Sub-50 nm Channel Lengths

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概要

• 論文の詳細を見る

• Experimental results of p-channel silicon vertical tunnel field-effect transistors down to sub-50 nm channel length are shown. As predicted by two-dimensional simulations, we show that the device on-current is nearly independent of channel length scaling. As the drain current is determined by electrons tunneling from the valence band to the conduction band, we show that mobility does not play any role in determining the device characteristics. Low temperature measurements reveal weak positive temperature coefficient in the transfer characteristics due to the dependence of bandgap on temperature. However, as expected for the silicon devices, low on-current is observed. Thus, we propose a lateral tunnel FET on SiGe-on-insulator with high on-currents and symmetric performance in n-channel as well as p-channel operating modes.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-04-30

著者

• Eisele Ignaz

  Institute Of Physics Faculty Of Electrical Engineering Universitat Der Bundeswher Munich

• Bhuwalka Krishna

  Institute Of Physics University Of The German Federal Armed Forces Munich

• Born Mathias

  Institute Of Physics Universitat Der Bundeswehr

• Sulima Torsten

  Institute Of Physics Universitat Der Bundeswehr

• Schindler Markus

  Institute Of Physics Universitat Der Bundeswehr

• Schmidt Matthias

  Institute Of Physics Universitat Der Bundeswehr

関連論文

• Performance Enhancement of Vertical Tunnel Field-Effect Transistor with SiGe in the δp^+ Layer
• Silicon Molecular Beam Epitaxy on Hydrogen-Plasma-Cleaned Substrates
• P-channel Vertical Tunnel Field-Effect Transistors Down to Sub-50nm Channel Length
• Reducing of R_ in Vertical Power-MOSFETs due to Local Channel Doping
• Performance Enhancement of Vertical Tunnel Field-Effect Transistor with SiGe in the $\delta$p+ Layer
• Performance Improvement in Vertical Surface Tunneling Transistors by a Boron Surface Phase
• Comparison of Sub-Bandgap Impact Ionization in Sub-100 nm Conventional and Lateral Asymmetrical Channel nMOSFETs
• P-Channel Tunnel Field-Effect Transistors down to Sub-50 nm Channel Lengths

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