Comparison of Sub-Bandgap Impact Ionization in Sub-100 nm Conventional and Lateral Asymmetrical Channel nMOSFETs

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概要

• 論文の詳細を見る

• Sub-bandgap impact ionization is compared in 100 nm channel length conventional channel and laterally asymmetrical n-channel metal oxide semiconductor field effect transistor (MOSFET). An abnormal increase of the gate voltage at which the substrate current peaks is reported. The effect is enhanced in the case of laterally asymmetric channel devices. Experimental and simulation results are presented that suggest the role of inversion layer quantization as an energy gain mechanism.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2001-04-30

著者

• Eisele Ignaz

  Institute Of Physics Faculty Of Electrical Engineering Universitat Der Bundeswher Munich

• Rao Valipe

  Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076, India

• Mahapatra Souvik

  Agere Systems, 600 Mountain Avenue, NJ 07974, USA

• Anil Kottantharayil

  Institute of Physics, Faculty of Electrical Engineering, Universität der Bundeswher Munich, 85577 Neubiberg, Germany

• Anil Kottantharayil

  Institute of Physics, Faculty of Electrical Engineering, Universität der Bundeswher Munich, 85577 Neubiberg, Germany

関連論文

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• P-channel Vertical Tunnel Field-Effect Transistors Down to Sub-50nm Channel Length
• Reducing of R_ in Vertical Power-MOSFETs due to Local Channel Doping
• Performance Enhancement of Vertical Tunnel Field-Effect Transistor with SiGe in the $\delta$p+ Layer
• Performance Improvement in Vertical Surface Tunneling Transistors by a Boron Surface Phase
• Comparison of Sub-Bandgap Impact Ionization in Sub-100 nm Conventional and Lateral Asymmetrical Channel nMOSFETs
• P-Channel Tunnel Field-Effect Transistors down to Sub-50 nm Channel Lengths

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