Performance Enhancement of Vertical Tunnel Field-Effect Transistor with SiGe in the $\delta$p+ Layer

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概要

• 論文の詳細を見る

• The metal–oxide–semiconductor (MOS)-based vertical tunnel field effect transistor (FET) on silicon has been proposed earlier and which showed gate-controlled band-to-band tunneling from the valence band in the heavily doped $\delta p^{+}$ layer at source to the conduction band in the inversion channel. In this work, using 2D computer simulation, we further investigate the device performance enhancement with SiGe in the $\delta p^{+}$ layer. On-current as well as threshold voltage are seen to improve considerably and meet the roadmap technology requirements. We also show that unlike the conventional MOSFET, the subthreshold swing of the vertical tunnel FET is not limited to the theoretical value of 60 mV/dec at room temperature.

• 2004-07-15

著者

• Eisele Ignaz

  Institute Of Physics Faculty Of Electrical Engineering Universitat Der Bundeswher Munich

• Bhuwalka Krishna

  Institute Of Physics University Of The German Federal Armed Forces Munich

• Schulze Jorg

  Institut Fur Haibleitertechnik University Of Stuttgart Stuttgart Research Center Of Photonic Engineering Scope

• Schulze Jörg

  Institute of Physics, University of the German Federal Armed Forces, Munich, Werner-Heisenberg-Weg 39, D85577 Neubiberg, Germany

• Bhuwalka Krishna

  Institute of Physics, University of the German Federal Armed Forces, Munich, Werner-Heisenberg-Weg 39, D85577 Neubiberg, Germany

• Eisele Ignaz

  Institute of Physics, University of the German Federal Armed Forces, Munich, Werner-Heisenberg-Weg 39, D85577 Neubiberg, Germany

関連論文

• Performance Enhancement of Vertical Tunnel Field-Effect Transistor with SiGe in the δp^+ Layer
• Silicon Molecular Beam Epitaxy on Hydrogen-Plasma-Cleaned Substrates
• P-channel Vertical Tunnel Field-Effect Transistors Down to Sub-50nm Channel Length
• Reducing of R_ in Vertical Power-MOSFETs due to Local Channel Doping
• Performance Enhancement of Vertical Tunnel Field-Effect Transistor with SiGe in the $\delta$p+ Layer
• Epitaxially Grown Indium Phosphide Quantum Dots on a Virtual Ge Substrate Realized on Si(001)
• Performance Improvement in Vertical Surface Tunneling Transistors by a Boron Surface Phase
• Comparison of Sub-Bandgap Impact Ionization in Sub-100 nm Conventional and Lateral Asymmetrical Channel nMOSFETs
• P-Channel Tunnel Field-Effect Transistors down to Sub-50 nm Channel Lengths

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