Eisele Ignaz | Institute Of Physics Faculty Of Electrical Engineering Universitat Der Bundeswher Munich
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概要
- 同名の論文著者
- Institute Of Physics Faculty Of Electrical Engineering Universitat Der Bundeswher Munichの論文著者
関連著者
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Eisele Ignaz
Institute Of Physics Faculty Of Electrical Engineering Universitat Der Bundeswher Munich
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Bhuwalka Krishna
Institute Of Physics University Of The German Federal Armed Forces Munich
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Sulima Torsten
Institute Of Physics Universitat Der Bundeswehr
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Schulze Jorg
Institut Fur Haibleitertechnik University Of Stuttgart Stuttgart Research Center Of Photonic Engineering Scope
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Fink Christoph
Institute Of Physics University Of The German Federal Armed Forces
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Eisele Ignaz
Institute Of Physics Universitat Der Bundeswehr
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Hansch Walter
Institute For Technical Electronics Technical University Munich
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Eisele Ignaz
Institute Of Physics University Of The German Federal Armed Forces
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Born Mathias
Institute Of Physics Universitat Der Bundeswehr
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Schindler Markus
Institute Of Physics Universitat Der Bundeswehr
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Schmidt Matthias
Institute Of Physics Universitat Der Bundeswehr
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Hansch Walter
Department Of Electrical Engineering Technical University Of Munich
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Eisele I
Univ. German Federal Armed Forces Neubiberg Deu
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Schulze J
Univ. German Federal Armed Forces Neubiberg Deu
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Ramm Juergen
Balzers Ltd.
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HAMMERL Erwin
Institut fur Physik, Fakultat Elektrotechnik, Universitat der Bundeswehr Munchen
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KIUNKE Werner
Institut fur Physik, Fakultat Elektrotechnik, Universitat der Bundeswehr Munchen
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BECK Eugen
Balzers Ltd.
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BORN Mathias
Institute of Physics, Universitat der Bundeswehr
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SCHINDLER Markus
Institute of Physics, Universitat der Bundeswehr
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SCHMIDT Matthias
Institute of Physics, Universitat der Bundeswehr
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SULIMA Torsten
Institute of Physics, Universitat der Bundeswehr
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Schulze Jorg
Institute Of Physics University Of The German Federal Armed Forces
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Hammerl E
Institut Fur Physik Fakultat Elektrotechnik Universitat Der Bundeswehr Munchen
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Kiunke Werner
Institut Fur Physik Fakultat Elektrotechnik Universitat Der Bundeswehr Munchen
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HANSCH Walter
Department of Electrical Engineering, Technical University of Munich
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WERNER Wolfgang
Infineon Technologies AG
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KANERT Werner
Infineon Technologies AG
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Rao Valipe
Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076, India
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Hansch Walter
Institute for Technical Electronics, Technical University Munich, 80333 Munich, Germany,
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Borthen Peter
Institute for Technical Electronics, Technical University Munich, 80333 Munich, Germany,
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Mahapatra Souvik
Agere Systems, 600 Mountain Avenue, NJ 07974, USA
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Anil Kottantharayil
Institute of Physics, Faculty of Electrical Engineering, Universität der Bundeswher Munich, 85577 Neubiberg, Germany
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Anil Kottantharayil
Institute of Physics, Faculty of Electrical Engineering, Universität der Bundeswher Munich, 85577 Neubiberg, Germany
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Schulze Jörg
Institute of Physics, University of the German Federal Armed Forces, Munich, Werner-Heisenberg-Weg 39, D85577 Neubiberg, Germany
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Fink Christoph
Institute of Physics, University of the German Federal Armed Forces, Munich, Germany
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Bhuwalka Krishna
Institute of Physics, University of the German Federal Armed Forces, Munich, Werner-Heisenberg-Weg 39, D85577 Neubiberg, Germany
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Eisele Ignaz
Institute of Physics, University of the German Federal Armed Forces, Munich, Werner-Heisenberg-Weg 39, D85577 Neubiberg, Germany
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Sulima Torsten
Institute of Physics, University of the German Federal Armed Forces, Munich, Germany
著作論文
- Silicon Molecular Beam Epitaxy on Hydrogen-Plasma-Cleaned Substrates
- P-channel Vertical Tunnel Field-Effect Transistors Down to Sub-50nm Channel Length
- Reducing of R_ in Vertical Power-MOSFETs due to Local Channel Doping
- Performance Enhancement of Vertical Tunnel Field-Effect Transistor with SiGe in the $\delta$p+ Layer
- Performance Improvement in Vertical Surface Tunneling Transistors by a Boron Surface Phase
- Comparison of Sub-Bandgap Impact Ionization in Sub-100 nm Conventional and Lateral Asymmetrical Channel nMOSFETs
- P-Channel Tunnel Field-Effect Transistors down to Sub-50 nm Channel Lengths