Eisele Ignaz | Institute Of Physics Universitat Der Bundeswehr
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概要
関連著者
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Eisele Ignaz
Institute Of Physics Universitat Der Bundeswehr
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Eisele Ignaz
Institute Of Physics Faculty Of Electrical Engineering Universitat Der Bundeswher Munich
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Bhuwalka Krishna
Institute Of Physics University Of The German Federal Armed Forces Munich
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Eisele I
Univ. German Federal Armed Forces Neubiberg Deu
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Eisele Ignaz
Institute Of Physics University Of The German Federal Armed Forces Munich
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Ramm Juergen
Balzers Ltd.
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SCHULZE Jorg
Institute of Physics, University of the German Federal Armed Forces, Munich
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Hansch Walter
Institute For Technical Electronics Technical University Munich
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HAMMERL Erwin
Institut fur Physik, Fakultat Elektrotechnik, Universitat der Bundeswehr Munchen
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KIUNKE Werner
Institut fur Physik, Fakultat Elektrotechnik, Universitat der Bundeswehr Munchen
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BECK Eugen
Balzers Ltd.
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BORN Mathias
Institute of Physics, Universitat der Bundeswehr
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SCHINDLER Markus
Institute of Physics, Universitat der Bundeswehr
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SCHMIDT Matthias
Institute of Physics, Universitat der Bundeswehr
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SULIMA Torsten
Institute of Physics, Universitat der Bundeswehr
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Eisele Ignaz
Institute Of Physics University Of The German Federal Armed Forces
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Born Mathias
Institute Of Physics Universitat Der Bundeswehr
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Sulima Torsten
Institute Of Physics Universitat Der Bundeswehr
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Schindler Markus
Institute Of Physics Universitat Der Bundeswehr
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Schmidt Matthias
Institute Of Physics Universitat Der Bundeswehr
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Hammerl E
Institut Fur Physik Fakultat Elektrotechnik Universitat Der Bundeswehr Munchen
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Kiunke Werner
Institut Fur Physik Fakultat Elektrotechnik Universitat Der Bundeswehr Munchen
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Hansch Walter
Department Of Electrical Engineering Technical University Of Munich
著作論文
- Performance Enhancement of Vertical Tunnel Field-Effect Transistor with SiGe in the δp^+ Layer
- Silicon Molecular Beam Epitaxy on Hydrogen-Plasma-Cleaned Substrates
- P-channel Vertical Tunnel Field-Effect Transistors Down to Sub-50nm Channel Length