Performance Enhancement of Vertical Tunnel Field-Effect Transistor with SiGe in the δp^+ Layer

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-07-15

著者

• Eisele Ignaz

  Institute Of Physics Universitat Der Bundeswehr

• Eisele Ignaz

  Institute Of Physics University Of The German Federal Armed Forces Munich

• Bhuwalka Krishna

  Institute Of Physics University Of The German Federal Armed Forces Munich

• SCHULZE Jorg

  Institute of Physics, University of the German Federal Armed Forces, Munich

関連論文

• Performance Enhancement of Vertical Tunnel Field-Effect Transistor with SiGe in the δp^+ Layer
• Silicon Molecular Beam Epitaxy on Hydrogen-Plasma-Cleaned Substrates
• P-channel Vertical Tunnel Field-Effect Transistors Down to Sub-50nm Channel Length
• Performance Enhancement of Vertical Tunnel Field-Effect Transistor with SiGe in the $\delta$p+ Layer
• P-Channel Tunnel Field-Effect Transistors down to Sub-50 nm Channel Lengths

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