P-channel Vertical Tunnel Field-Effect Transistors Down to Sub-50nm Channel Length
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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Eisele Ignaz
Institute Of Physics Universitat Der Bundeswehr
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Eisele Ignaz
Institute Of Physics Faculty Of Electrical Engineering Universitat Der Bundeswher Munich
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Bhuwalka Krishna
Institute Of Physics University Of The German Federal Armed Forces Munich
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BORN Mathias
Institute of Physics, Universitat der Bundeswehr
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SCHINDLER Markus
Institute of Physics, Universitat der Bundeswehr
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SCHMIDT Matthias
Institute of Physics, Universitat der Bundeswehr
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SULIMA Torsten
Institute of Physics, Universitat der Bundeswehr
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Born Mathias
Institute Of Physics Universitat Der Bundeswehr
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Sulima Torsten
Institute Of Physics Universitat Der Bundeswehr
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Schindler Markus
Institute Of Physics Universitat Der Bundeswehr
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Schmidt Matthias
Institute Of Physics Universitat Der Bundeswehr
関連論文
- Performance Enhancement of Vertical Tunnel Field-Effect Transistor with SiGe in the δp^+ Layer
- Silicon Molecular Beam Epitaxy on Hydrogen-Plasma-Cleaned Substrates
- P-channel Vertical Tunnel Field-Effect Transistors Down to Sub-50nm Channel Length
- Reducing of R_ in Vertical Power-MOSFETs due to Local Channel Doping
- Performance Enhancement of Vertical Tunnel Field-Effect Transistor with SiGe in the $\delta$p+ Layer
- Performance Improvement in Vertical Surface Tunneling Transistors by a Boron Surface Phase
- Comparison of Sub-Bandgap Impact Ionization in Sub-100 nm Conventional and Lateral Asymmetrical Channel nMOSFETs
- P-Channel Tunnel Field-Effect Transistors down to Sub-50 nm Channel Lengths