Performance Improvement in Vertical Surface Tunneling Transistors by a Boron Surface Phase

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概要

• 論文の詳細を見る

• The fabrication and characteristics of silicon tunneling transistors based on vertical metal-oxide-semiconductor (MOS) gated pin-diodes are shown. In these devices the tunnel junction is formed between an influenced MOS-channel and an abrupt, ultra-highly doped boron layer. The ultra-high doping amount of about $2.6\times 10^{14}$ cm-2 is achieved by the formation of a $\sqrt{3}\times\sqrt{3}$-R30° boron surface phase. The tunneling transport and the influence of the boron surface phase on the transistor behavior is investigated. The transistor performance is characterized by a current gain between 3 and 5 orders of magnitude at a low supply voltage of $-0.2$ V with saturation behavior.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2001-05-15

著者

• Fink Christoph

  Institute Of Physics University Of The German Federal Armed Forces

• Eisele Ignaz

  Institute Of Physics Faculty Of Electrical Engineering Universitat Der Bundeswher Munich

• Hansch Walter

  Institute For Technical Electronics Technical University Munich

• Sulima Torsten

  Institute Of Physics Universitat Der Bundeswehr

• Schulze Jorg

  Institut Fur Haibleitertechnik University Of Stuttgart Stuttgart Research Center Of Photonic Engineering Scope

• Hansch Walter

  Institute for Technical Electronics, Technical University Munich, 80333 Munich, Germany,

• Borthen Peter

  Institute for Technical Electronics, Technical University Munich, 80333 Munich, Germany,

• Fink Christoph

  Institute of Physics, University of the German Federal Armed Forces, Munich, Germany

• Sulima Torsten

  Institute of Physics, University of the German Federal Armed Forces, Munich, Germany

関連論文

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• P-channel Vertical Tunnel Field-Effect Transistors Down to Sub-50nm Channel Length
• Reducing of R_ in Vertical Power-MOSFETs due to Local Channel Doping
• Performance Enhancement of Vertical Tunnel Field-Effect Transistor with SiGe in the $\delta$p+ Layer
• Epitaxially Grown Indium Phosphide Quantum Dots on a Virtual Ge Substrate Realized on Si(001)
• Performance Improvement in Vertical Surface Tunneling Transistors by a Boron Surface Phase
• Comparison of Sub-Bandgap Impact Ionization in Sub-100 nm Conventional and Lateral Asymmetrical Channel nMOSFETs
• P-Channel Tunnel Field-Effect Transistors down to Sub-50 nm Channel Lengths

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