Reducing of R_<On> in Vertical Power-MOSFETs due to Local Channel Doping
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-04-01
著者
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Fink Christoph
Institute Of Physics University Of The German Federal Armed Forces
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Eisele Ignaz
Institute Of Physics Faculty Of Electrical Engineering Universitat Der Bundeswher Munich
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Schulze J
Univ. German Federal Armed Forces Neubiberg Deu
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Eisele Ignaz
Institute Of Physics University Of The German Federal Armed Forces
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Schulze Jorg
Institute Of Physics University Of The German Federal Armed Forces
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HANSCH Walter
Department of Electrical Engineering, Technical University of Munich
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WERNER Wolfgang
Infineon Technologies AG
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KANERT Werner
Infineon Technologies AG
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Hansch Walter
Department Of Electrical Engineering Technical University Of Munich
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Schulze Jorg
Institut Fur Haibleitertechnik University Of Stuttgart Stuttgart Research Center Of Photonic Engineering Scope
関連論文
- Silicon Molecular Beam Epitaxy on Hydrogen-Plasma-Cleaned Substrates
- P-channel Vertical Tunnel Field-Effect Transistors Down to Sub-50nm Channel Length
- Reducing of R_ in Vertical Power-MOSFETs due to Local Channel Doping
- Performance Enhancement of Vertical Tunnel Field-Effect Transistor with SiGe in the $\delta$p+ Layer
- Epitaxially Grown Indium Phosphide Quantum Dots on a Virtual Ge Substrate Realized on Si(001)
- Performance Improvement in Vertical Surface Tunneling Transistors by a Boron Surface Phase
- Comparison of Sub-Bandgap Impact Ionization in Sub-100 nm Conventional and Lateral Asymmetrical Channel nMOSFETs
- P-Channel Tunnel Field-Effect Transistors down to Sub-50 nm Channel Lengths