Bhuwalka Krishna | Institute Of Physics University Of The German Federal Armed Forces Munich

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概要

• 同名の論文著者
• Institute Of Physics University Of The German Federal Armed Forces Munichの論文著者

関連著者

• Bhuwalka Krishna

  Institute Of Physics University Of The German Federal Armed Forces Munich

• Eisele Ignaz

  Institute Of Physics Faculty Of Electrical Engineering Universitat Der Bundeswher Munich

• Eisele Ignaz

  Institute Of Physics Universitat Der Bundeswehr

• Born Mathias

  Institute Of Physics Universitat Der Bundeswehr

• Sulima Torsten

  Institute Of Physics Universitat Der Bundeswehr

• Schindler Markus

  Institute Of Physics Universitat Der Bundeswehr

• Schmidt Matthias

  Institute Of Physics Universitat Der Bundeswehr

• Eisele Ignaz

  Institute Of Physics University Of The German Federal Armed Forces Munich

• SCHULZE Jorg

  Institute of Physics, University of the German Federal Armed Forces, Munich

• BORN Mathias

  Institute of Physics, Universitat der Bundeswehr

• SCHINDLER Markus

  Institute of Physics, Universitat der Bundeswehr

• SCHMIDT Matthias

  Institute of Physics, Universitat der Bundeswehr

• SULIMA Torsten

  Institute of Physics, Universitat der Bundeswehr

• Schulze Jorg

  Institut Fur Haibleitertechnik University Of Stuttgart Stuttgart Research Center Of Photonic Engineering Scope

• Schulze Jörg

  Institute of Physics, University of the German Federal Armed Forces, Munich, Werner-Heisenberg-Weg 39, D85577 Neubiberg, Germany

• Bhuwalka Krishna

  Institute of Physics, University of the German Federal Armed Forces, Munich, Werner-Heisenberg-Weg 39, D85577 Neubiberg, Germany

• Eisele Ignaz

  Institute of Physics, University of the German Federal Armed Forces, Munich, Werner-Heisenberg-Weg 39, D85577 Neubiberg, Germany

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著作論文

• Performance Enhancement of Vertical Tunnel Field-Effect Transistor with SiGe in the δp^+ Layer
• P-channel Vertical Tunnel Field-Effect Transistors Down to Sub-50nm Channel Length
• Performance Enhancement of Vertical Tunnel Field-Effect Transistor with SiGe in the $\delta$p+ Layer
• P-Channel Tunnel Field-Effect Transistors down to Sub-50 nm Channel Lengths

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