Correlation between Volume Fraction of Silicon Clusters in Amorphous Silicon Films and Optical Emission Properties of Si
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概要
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The volume fraction of silicon clusters in amorphous silicon (a-Si:H) films has been investigated using specially designed quartz crystal microbalances (QCMs) together with optical emission spectroscopy (OES). The optical emission intensities of Si<sup>*</sup>and SiH<sup>*</sup>and their intensity ratios are selected for comparison with the QCM results. We show that the volume fraction of silicon clusters strongly correlates with not only the electron temperature but also the SiH<sup>*</sup>intensity. This suggests that the ratios of Si<sup>*</sup>/SiH<sup>*</sup>and SiH<sup>*</sup>can be used to predict the volume fraction of Si clusters in a-Si:H films.
- 2013-11-25
著者
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Koga Kazunori
Graduate School Of Information Science And Electrical Engineering Kyushu University
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Kamataki Kunihiro
Center For Research And Advancement In Higher Education Kyushu University
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Uchida Giichiro
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Shiratani Masaharu
Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
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Itagaki Naho
Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
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Kim Yeonwon
Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
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Hatozaki Kosuke
Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
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Hashimoto Yuji
Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
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Seo Hyunwoong
Center of Plasma Nano-interface Engineering Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
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