Effect of Nitridation of Si Nanoparticles on the Performance of Quantum-Dot Sensitized Solar Cells
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概要
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We developed Si quantum-dot (QD) sensitized solar cells using nitridated Si nanoparticle films. The Si/N content ratio of the Si nanoparticle films was combinatorially controlled in double multi-hollow discharge plasma chemical vapor deposition (CVD) process in a SiH4/H2 and N2 gas mixture. The short-circuit current density of Si QD sensitized solar cells increases by a factor of 1.3 with the nitridation of Si nanoparticles, and a high photon-to-current conversion efficiency of 40% was achieved at a short wavelength of 350 nm.
- 2012-01-25
著者
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Koga Kazunori
Graduate School Of Information Science And Electrical Engineering Kyushu University
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Kawashima Yuki
Graduate School Of Informatics Shizuoka University:presently With Mitsubishi Electric Corp.
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Nakahara Kenta
Graduate School Of Information Science And Electrical Engineering Kyushu University
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Kamataki Kunihiro
Center For Research And Advancement In Higher Education Kyushu University
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Uchida Giichiro
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Shiratani Masaharu
Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
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Itagaki Naho
Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
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Yamamoto Kosuke
Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
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Sato Muneharu
Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
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Kawashima Yuki
Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
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Kamataki Kunihiro
Center for Research and Advancement in Higher Education, Kyushu University, Fukuoka 819-0395, Japan
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