High Amount Cluster Incorporation in Initial Si Film Deposition by SiH4 Plasma Chemical Vapor Deposition
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概要
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We have carried out in-situ measurements of Si cluster volume fraction in Si films during plasma chemical vapor deposition by using quartz crystal microbalances (QCM's) together with a cluster-eliminating filter. The cluster volume fraction in films is deduced from film deposition rates with and without Si clusters using QCM's. By employing this method we have revealed a depth profile of the Si cluster volume fraction. A high cluster volume fraction is observed in the initial phase of film deposition. This behavior is compared with time evolution of SiH*, Si* emission intensities and their intensity ratio.
- 2013-01-25
著者
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Koga Kazunori
Graduate School Of Information Science And Electrical Engineering Kyushu University
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Kamataki Kunihiro
Center For Research And Advancement In Higher Education Kyushu University
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Uchida Giichiro
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Shiratani Masaharu
Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
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Itagaki Naho
Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
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Kim Yeonwon
Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
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Koga Kazunori
Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
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Hatozaki Kosuke
Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
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Hashimoto Yuji
Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
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Seo Hyunwoong
Center of Plasma Nano-interface Engineering Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
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