Highly Conducting and Very Thin ZnO:Al Films with ZnO Buffer Layer Fabricated by Solid Phase Crystallization from Amorphous Phase
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概要
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We propose a novel method of oxide crystal growth via atomic-additive mediated amorphization. By utilizing this method, solid-phase crystallization (SPC) of ZnO from amorphous phase has been successfully demonstrated via nitrogen atom mediation. The resultant SPC-ZnO films are highly orientated and the crystallinity is higher than that of the films prepared by conventional sputtering. By using the SPC-ZnO as a buffer layer, the resistivity of ZnO:Al (AZO) films is drastically decreased. 20-nm-thick AZO films with a resistivity of $5\times 10^{-4}$ $\Omega$ cm and an optical transmittance higher than 80% in a wide wavelength range of 400--2500 nm have been obtained.
- 2011-01-25
著者
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Koga Kazunori
Graduate School Of Information Science And Electrical Engineering Kyushu University
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Nakahara Kenta
Graduate School Of Information Science And Electrical Engineering Kyushu University
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Yamashita Daisuke
Graduate School Of Kansai University (currently At Dainippon Printing Co. Ltd.)
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Uchida Giichiro
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Shiratani Masaharu
Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
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Itagaki Naho
Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
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Kuwahara Kazunari
Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
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Yamashita Daisuke
Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
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