Deposition of Cluster-Free B-doped Hydrogenated Amorphous Silicon Films Using SiH4+B10H14 Multi-Hollow Discharge Plasma Chemical Vapor Deposition

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We have deposited cluster-free B-doped hydrogenated amorphous silicon (a-Si:H) films using a SiH4+B10H14 multi-hollow discharge plasma chemical vapor deposition (CVD) method. We have studied the dependence of the deposition rate, band gap, and conductivity of the films on the gas flow rate ratio R=[\text{B_{10}H_{14}}]/[\text{SiH_{4}}]. The deposition rate for SiH4+B10H14 plasmas is 2--3 times as high as that for pure SiH4 plasmas. Optical emission spectroscopy (OES) measurements indicate that SiH3 radical generation rate remains nearly constant regardless of R. These results suggest that BxHy radicals enhance the surface reaction probability and/or sticking probability of SiH3, being the predominant deposition precursor. Cluster-free B-doped a-Si:H films have a wide band-gap energy of 1.8--2.0 eV and a conductivity as high as 5.0\times 10^{-6} S/cm. These results demonstrate that cluster-free B-doped a-Si:H films deposited using SiH4+B10H14 multi-hollow discharge plasma CVD are promising as a p-layer of pin a-Si:H solar cells.
2012-01-25