Deposition of Cluster-Free B-doped Hydrogenated Amorphous Silicon Films Using SiH4+B10H14 Multi-Hollow Discharge Plasma Chemical Vapor Deposition
スポンサーリンク
概要
- 論文の詳細を見る
We have deposited cluster-free B-doped hydrogenated amorphous silicon (a-Si:H) films using a SiH4+B10H14 multi-hollow discharge plasma chemical vapor deposition (CVD) method. We have studied the dependence of the deposition rate, band gap, and conductivity of the films on the gas flow rate ratio R=[\text{B_{10}H_{14}}]/[\text{SiH_{4}}]. The deposition rate for SiH4+B10H14 plasmas is 2--3 times as high as that for pure SiH4 plasmas. Optical emission spectroscopy (OES) measurements indicate that SiH3 radical generation rate remains nearly constant regardless of R. These results suggest that BxHy radicals enhance the surface reaction probability and/or sticking probability of SiH3, being the predominant deposition precursor. Cluster-free B-doped a-Si:H films have a wide band-gap energy of 1.8--2.0 eV and a conductivity as high as 5.0\times 10^{-6} S/cm. These results demonstrate that cluster-free B-doped a-Si:H films deposited using SiH4+B10H14 multi-hollow discharge plasma CVD are promising as a p-layer of pin a-Si:H solar cells.
- 2012-01-25
著者
-
Koga Kazunori
Graduate School Of Information Science And Electrical Engineering Kyushu University
-
Nakahara Kenta
Graduate School Of Information Science And Electrical Engineering Kyushu University
-
Yamashita Daisuke
Graduate School Of Kansai University (currently At Dainippon Printing Co. Ltd.)
-
Kamataki Kunihiro
Center For Research And Advancement In Higher Education Kyushu University
-
Uchida Giichiro
Graduate School Of Advanced Sciences Of Matter Hiroshima University
-
Shiratani Masaharu
Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
-
Itagaki Naho
Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
-
Matsunaga Takeaki
Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
-
Matsuzaki Hidefumi
Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
-
Kim Yeon-Won
Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
-
Yamashita Daisuke
Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
関連論文
- Propagation Characteristics of Ion Acoustic Waves in an Ar/SF_6 Plasma
- Highly Conducting and Very Thin ZnO:Al Films with ZnO Buffer Layer Fabricated by Solid Phase Crystallization from Amorphous Phase
- Redox Characteristics of Thiol Compounds Using Radicals Produced by Water Vapor Radio Frequency Discharge
- Numerical Simulation for Mechanism of Airway Narrowing in Asthma(Reviewed Papers Accepted for Publication in this Special Issue)(Special Issue on Bioengineering)
- Numerical Simulation for Mechanism of Airway Narrowing in Asthma
- Numerical Simulation for Mechanism of Airway Narrowing in Asthma
- Impacts of amplitude modulation of RF discharge voltage on the growth of nanoparticles in reactive plasmas
- Impacts of Amplitude Modulation of RF Discharge Voltage on the Growth of Nanoparticles in Reactive Plasmas
- Evaluation of Crystal Orientation for (K,Na)NbO Films Using X-ray Diffraction Reciprocal Space Map and Relationship between Crystal Orientation and Piezoelectric Coefficient
- Discharge Characteristics of Plasma Display Panels with SrCaO Protective Layer Manufactured Using "All-in-Vacuum" Process
- Panel Processing Effects on Discharge Characteristics of Plasma Display Panels
- Deposition of Cluster-Free B-doped Hydrogenated Amorphous Silicon Films Using SiH4+B10H14 Multi-Hollow Discharge Plasma Chemical Vapor Deposition
- Effect of Nitridation of Si Nanoparticles on the Performance of Quantum-Dot Sensitized Solar Cells
- Effects of Hydrogen Dilution on ZnO Thin Films Fabricated via Nitrogen-Mediated Crystallization
- Combinatorial Deposition of Microcrystalline Silicon Films Using Multihollow Discharge Plasma Chemical Vapor Deposition
- Improvement of Si Adhesion and Reduction of Electron Recombination for Si Quantum Dot-Sensitized Solar Cells
- High Amount Cluster Incorporation in Initial Si Film Deposition by SiH4 Plasma Chemical Vapor Deposition
- Characteristics of Crystalline Silicon/Si Quantum Dot/Poly(3,4-ethylenedioxythiophene) Hybrid Solar Cells
- Effects of Nitrogen on Crystal Growth of Sputter-Deposited ZnO Films for Transparent Conducting Oxide
- Characteristics of Crystalline Silicon/Si Quantum Dot/Poly(3,4-ethylenedioxythiophene) Hybrid Solar Cells (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
- Correlation between Volume Fraction of Silicon Clusters in Amorphous Silicon Films and Optical Emission Properties of Si
- Improvement on the Electron Transfer of Dye-Sensitized Solar Cell Using Vanadium Doped TiO
- Correlation between Volume Fraction of Silicon Clusters in Amorphous Silicon Films and Optical Emission Properties of Si[*] and SiH[*] (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
- Effects of Nitrogen on Crystal Growth of Sputter-Deposited ZnO Films for Transparent Conducting Oxide (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)