Combinatorial Deposition of Microcrystalline Silicon Films Using Multihollow Discharge Plasma Chemical Vapor Deposition
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概要
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A high-pressure depletion method using plasma chemical vapor deposition (CVD) is often used to deposit hydrogenated microcrystalline silicon (μc-Si:H) films of a low defect density at a high deposition rate. To understand proper deposition conditions of μc-Si:H films for a high-pressure depletion method, Si films were deposited in a combinatorial way using a multihollow discharge plasma CVD method by which fluxes of H and SiH3 radicals and their flux ratio can be varied with the distance from the discharges. The higher gas pressure brings about the higher deposition rate, whereas the process window of device quality μc-Si:H films becomes quite narrower for the higher gas pressure.
- 2012-01-25
著者
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Koga Kazunori
Graduate School Of Information Science And Electrical Engineering Kyushu University
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Nakahara Kenta
Graduate School Of Information Science And Electrical Engineering Kyushu University
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Yamashita Daisuke
Graduate School Of Kansai University (currently At Dainippon Printing Co. Ltd.)
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Kamataki Kunihiro
Center For Research And Advancement In Higher Education Kyushu University
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Uchida Giichiro
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Shiratani Masaharu
Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
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Itagaki Naho
Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
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Matsunaga Takeaki
Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
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Kim Yeonwon
Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
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Matsuzaki Hidefumi
Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
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Yamashita Daisuke
Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
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