Effect of Pad Surface Micro-Texture on Removal Rate during Interlayer Dielectric Chemical Mechanical Planarization Process
スポンサーリンク
概要
- 論文の詳細を見る
The effect of pad surface micro-texture on removal rate in interlayer dielectric chemical mechanical planarization was investigated. Blanket 200-mm oxide wafers were polished on a Dow® IC1000™ K-groove pad conditioned at two different conditioning forces. The coefficient of friction increased slightly (by 7%) while removal rate increased dramatically (by 65%) when conditioning force was increased from 26.7 to 44.5 N. Pad surface micro-texture analysis results showed that pad surface contact area decreased dramatically (by 71%) at the conditioning force of 44.5 N, leading to a sharp increase in the local contact pressure and resulting in a significantly higher removal rate.
- 2013-01-25
著者
-
Zhuang Yun
Department Of Chemical And Environmental Engineering University Of Arizona
-
PHILIPOSSIAN Ara
Department of Chemical and Environmental Engineering University of Arizona
-
Borucki Leonard
Araca, Inc.
-
Theng Siannie
Araca, Inc., Tucson, AZ 85718, U.S.A.
-
Liao Xiaoyan
Department of Chemical and Environmental Engineering, University of Arizona, Tucson, AZ 85721, U.S.A.
-
Cheng Jiang
Department of Chemical and Environmental Engineering, University of Arizona, Tucson, AZ 85721, U.S.A.
-
Ashizawa Toranosuke
Hitachi Chemical Co., Ltd., Hitachi, Ibaraki 317-8555, Japan
関連論文
- Tribological study for low shear force CMP process on damascene interconnects (シリコン材料・デバイス)
- Role of Slurry Flow Rate and Solids Content on Critical Tribological and Fluid Dynamics Attributes of ILD CMP
- Slurry Utilization Efficiency Studies in Chemical Mechanical Planarization
- Characterization of Slurry Residues in Pad Grooves for Diamond Disc and High Pressure Micro Jet Pad Conditioning Processes
- TRIBOLOGY, FLUID DYNAMICS AND REMOVAL RATE CHARACTERIZATION OF NOVEL SLURRIES FOR ILD POLISH APPLICATIONS
- Frictional and Removal Rate Studies of Silicon Dioxide and Silicon Nitride CMP Using Novel Cerium Dioxide Abrasive Slurries
- Theoretical and Experimental Investigation of Conditioner Design Factors on Tribology and Removal Rate in Copper Chemical Mechanical Planarization
- Dependence of Oxide Pattern Density Variation on Motor Current Endpoint Detection during Shallow Trench Isolation Chemical Mechanical Planarization
- Characterization of Pad–Wafer Contact and Surface Topography in Chemical Mechanical Planarization Using Laser Confocal Microscopy
- Optical and Mechanical Characterization of Chemical Mechanical Planarization Pad Surfaces
- The Spectral Fingerprints and the Sounds of Chemical Mechanical Planarization Processes
- Analysis of Formation of Pad Stains in Copper Chemical Mechanical Planarization
- Slurry Utilization Efficiency Studies in Chemical Mechanical Planarization
- Effect of Pad Surface Micro-Texture on Removal Rate during Interlayer Dielectric Chemical Mechanical Planarization Process
- Tribological, Thermal, and Kinetic Characterization of 300-mm Copper Chemical Mechanical Planarization Process
- Analysis of A Novel Slurry Injection System in Chemical Mechanical Planarization
- Berberine Inhibits Growth and Induces G1 Arrest and Apoptosis in Human Cholangiocarcinoma QBC939 Cells
- Characterization of Slurry Residues in Pad Grooves for Diamond Disc and High Pressure Micro Jet Pad Conditioning Processes
- Fundamental Tribological and Removal Rate Studies of Inter-Layer Dielectric Chemical Mechanical Planarization
- Effect of pad surface micro-texture on dishing and erosion during shallow trench isolation chemical mechanical planarization