Effects of BaTiO3 Content and Mn Doping on Ferroelectric Properties of NaNbO3–BaTiO3 Thin Films Prepared by Chemical Solution Deposition

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Lead-free ferroelectric NaNbO3–BaTiO3 thin films were prepared by chemical solution deposition. Perovskite single-phase NaNbO3–BaTiO3 thin films were successfully fabricated at 550 °C on Pt/TiOx/SiO2/Si substrates. The ferroelectric properties of the NaNbO3–BaTiO3 thin films depended on the BaTiO3 content of NaNbO3–BaTiO3. Among NaNbO3–BaTiO3 films with various BaTiO3 concentrations, the 0.95NaNbO3–0.05BaTiO3 thin films showed relatively large polarization at $-190$ °C, although the insulating resistance of the films was not sufficiently high at room temperature. To improve the electrical resistivity at ambient temperatures, Mn doping of 0.95NaNbO3–0.05BaTiO3 was examined. The leakage current density of the films was found to be greatly reduced by a small amount of Mn doping. 1.0 mol % Mn-doped 0.95NaNbO3–0.05BaTiO3 thin films showed well-shaped slim ferroelectric polarization–electric field ($P$–$E$) hysteresis loops at room temperature. The remanent polarization ($P_{\text{r}}$) and coercive field ($E_{\text{c}}$) values of the 1.0 mol % Mn-doped 0.95NaNbO3–0.05BaTiO3 thin films at 1 kHz were approximately 5 μC/cm2 and 50 kV/cm, respectively. Furthermore, the ferroelectric $P$–$E$ loops of the 1.0 mol % Mn-doped 0.95NaNbO3–0.05BaTiO3 thin films showed good frequency dependence and could be characterized at a frequency as low as 1 Hz.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2009-09-25

Effects of BaTiO3 Content and Mn Doping on Ferroelectric Properties of NaNbO3–BaTiO3 Thin Films Prepared by Chemical Solution Deposition

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