Synthesis and Properties of Intergrown Bi4Ti3O12-SrBi4Ti4O15 Ferroelectric Thin Films by Chemical Solution Deposition

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概要

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• Ferroelectric Bi4Ti3O12-SrBi4Ti4O15 (BiT-SBTi)-based thin films have been prepared by chemical solution deposition. Homogeneous and stable precursor solutions were prepared by controlling the reaction of starting metalorganic compounds in a solution. BiT-SBTi precursor films crystallized in the desired intergrown BiT-SBTi single phase on Pt/TiOx/SiO2/Si substrates if several processing conditions were optimized. To improve the ferroelectric properties of resultant films, the effect of Nd substitution at Bi sites in BiT-SBTi on the crystallization, the surface morphology and the ferroelectric properties was examined. BiT-SBTi thin films with an optimum amount of Nd substitution exhibited ferroelectric properties and demonstrated a 2Pr value larger than 30 μC/cm2. The surface morphology of synthesized thin films was also improved by controlling the amount of Nd substitution in BiT-SBTi.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-09-15

著者

• Yogo Toshinobu

  Division Of Nanomaterials Science Ecotopia Science Institute Nagoya University

• Sakamoto Wataru

  Division Of Applied Biosciences Graduate School Of Agriculture Kyoto University

• SHIMURA Tetsuo

  Division of Nanomaterials Science, EcoTopia Science Institute, Nagoya University

• Shimura Tetsuo

  Division of Nanomaterials Science, EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

• Imada Keiichi

  Division of Nanomaterials Science, EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

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