KTa_<0.50>Nb_<0.50>O_3配向薄膜のUVプロセッシング

概要

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Patterned KTa_<0.50>Nb_<0.50>O_3(KTN50)thin films with a(100)preferred orientation were successfully crystanized at 700°C on MgO(100)substrates. Both benzoylacetone(BZAC)-modified KTN precursor and 2-ethoxyethanol(EGMEE)-modified KTN precursor films showed charge-transfer UV absorption. The decrease in CH arld CO absorptions in the IR spectra for the EGMEE-modified precursor wag more rapid than that in the BZAC-modified prectusor. Perovskite KTN films with a prominent(100)orientation crystallized at 700°C on MgO(100)substrates from both systems. However, the epitaxy of KTN films from the EGMEE-modified precursor combined with UV treatment was better than that from the BZAC-modified precursor. The optical transmittance of KTN films from the EGMEE-modified precursor showed a better interference fringe than that from the BZAC-modified prectlrsor. UV-treated KTN films on Pt(100)/MgO(100)substrates, Which were derived from the EGMEE-modified precursor, revealed the highest dielectric constant and the lowest loss. Patterned KTN films from the EGMEE-modified precursor had a smooth and pore-free surface, according to scanning electron microscopy(SEM)observation.
社団法人日本セラミックス協会の論文
1999-11-01