Synthesis and Properties of V-Doped (Sr,Ca)2(Nb,Ta)2O7 Thin Films by Chemical Solution Deposition (特集高精度電子部品材料)

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Ca- and V-codoped Sr2(Nb,Ta)2O7 thin films have been fabricated by the chemical solution deposition. Homogeneous and stable precursor solutions were prepared by controlling the reaction of starting metal-organic compounds. The improvement of ferroelectric properties of the Sr2(Nb,Ta)2O7-based films were achieved through the V doping to the (Sr0.9Ca0.1)2(Nb0.3Ta0.7)2O7. In the composition range of 0≤x≤0.15, (Sr0.9Ca0.1)2{(Nb0.3Ta0.7)1-xVx}2O7 (SCNTVx) thin films crystallized in the single-phase of (Sr,Ca)2(Nb,Ta)2O7 without any formation of the second phase. The crystallization temperature of the layered perovskite SCNTVx thin films on Pt/Ir/Ti/SiO2/Si substrates was found to be below 700°C. Synthesized SCNTVx thin films showed the low dielectric constant with low loss tangent over wide frequency and temperature regions. Furthermore, the SCNTVx thin films with an optimum amount of V could be crystallized at 650°C and exhibited the typical ferroelectric hysteresis loop with a Pr of 0.8 μC/cm2 and a Ec of 75 kV/cm.
社団法人粉体粉末冶金協会の論文
2005-12-15