Correlation between Morphology and Electrical Properties of $\alpha$,$\alpha'$-Diethyl-sexithiophene Thin Films

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We report on the correlation between the morphology and electronic properties of $\alpha$,$\alpha'$-diethyl-sexithiophene (DE6T) thin films deposited on SiO2/Si substrates at different substrate temperatures. Highly ordered films with a 200 plane placing of $d_{200}=27.46$ Å are observed. When the substrate temperature is higher than 100 °C, increasing the substrate temperature significantly improves the molecular ordering of DE6T, and the lowest the full width at half maximum (FWHM) was obtained at a substrate temperature of 120 °C. The mobility of DE6T is strongly dependent on substrate temperature. Increasing grain size at higher substrate temperatures improves the mobility of DE6T TFTs, but gaps generated between grains degrade the performance of DE6T TFTs at a substrate temperature higher than 120 °C. When the deposition of DE6T is performed at a substrate temperature of 100 °C, the maximum field-effect mobility of 0.24 cm2 V-1 s-1 can be obtained.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2008-02-25