Temperature Dependence of Electrical Properties of Ambipolar Organic Transistors Based on F16CuPc/$\alpha$-Sexithiophene p–n Heterojunction
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概要
- 論文の詳細を見る
Ambipolar organic thin-film transistors based on a F16CuPc/$\alpha$-sexithiophene p–n heterojunction have been fabricated and analyzed to investigate the temperature dependence of ambipolar mobilities. At high temperatures (${>}50$ K), the ambipolar mobilities follow a thermally activated hopping process. Thermal activation energy ($E_{\text{a}}$) is 79.3 meV for n-channel and 60.9 meV for p-channel, larger than those of single-layer devices when the temperature exceeds 140 K. The increase in $E_{\text{a}}$ appears to originate from the small ambipolar mobilities. At temperatures ranging from 50 to 140 K, we have a second regime with much lower $E_{\text{a}}$ of 5.7 meV for n-channel and 4.6 meV for p-channel, where the charge transport is dominated by shallow traps. On the other hand, the ambipolar mobilities become practically temperature independent at temperatures lower than 50 K, which is described as bandlike transport.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2010-04-25
著者
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Baba Mamoru
Faculty Of Engineering Iwate University
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Ye Rongbin
Faculty Of Engineering Iwate University
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Mamoru Baba
Faculty of Engineering, Iwate University, 4-3-5 Ueda, Morioka 020-8551, Japan
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Ohta Koji
Faculty of Engineering, Iwate University, 3-18-8 Ueda, Morioka 020-8551, Japan
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Takanori Suzuki
Iwate Industrial Research Institute, 3-35-2 Iioka-shinden, Morioka 020-0852, Japan
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Kunio Mori
Faculty of Engineering, Iwate University, 4-3-5 Ueda, Morioka 020-8551, Japan
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Koji Ohta
Faculty of Engineering, Iwate University, 4-3-5 Ueda, Morioka 020-8551, Japan
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Rongbin Ye
Faculty of Engineering, Iwate University, 4-3-5 Ueda, Morioka 020-8551, Japan
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