Dependence of Ambipolar Transport on First Active Layer Thickness in Organic Homostructure Transistors
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概要
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We investigated the dependence of ambipolar transport on the first active layer thickness in organic thin-film transistors based on an F16CuPc/CuPc homostructure. Ambipolar transport is observed at the first layer (F16CuPc) film thickness between 4 and 12 nm. By increasing the first layer thickness, $n$-channel operating characteristics are enhanced, whereas $ p$-channel operating characteristics are suppressed. As a result, a balanced transport behavior is shown at the first layer thickness of 5 nm. When the first film thickness is larger than 12 nm, only the $n$-type operating characteristics are observed. The electron field-effect mobility is enhanced up to $2.6\times 10^{-2}$ cm2 V-1 s-1 and the threshold voltage is suppressed to $-7.4$ V. This result gives us a guide for improving the device performance of $n$-channel OTFTs employing an organic $ pn$ junction.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-05-15
著者
-
Mori Kunio
Faculty Of Engineering Iwate University
-
Baba Mamoru
Faculty Of Engineering Iwate University
-
SUZUKI Kazunori
Iwate Industrial Research Institute
-
Ye Rongbin
Faculty Of Engineering Iwate University
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