Effect of RF Power on Physical Properties of MgTiO3 Films by RF Magnetron Sputtering

概要

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Physical properties of rf-sputtered crystalline MgTiO3 thin films deposited on n-type Si(100) substrates at different rf powers have been investigated. These films were fabricated at 400°C by choosing different RF powers (from 100 to 400 W) at a substrate temperature of 400°C which is much lower than the bulk sintering temperature. X-ray diffraction (XRD) analysis showed that the deposited films exhibited a polycrystalline microstructure. The grain size of the films increased with increasing RF power. The electrical properties were measured using $C$–$V$ and $I$–$V$ measurements on metal-insulator-semiconductor (MIS) capacitor structures. At an RF power of 400 W and a substrate temperature of 400°C, a dielectric constant of 16.2 ($ f =10$ MHz), a leakage current density of $2.03 \times 10^{-9}$ A/mm2 and a dissipation factor of 0.041 were obtained.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2005-09-15