Microwave Dielectric Properties of CuO-Doped La(Co1/2Ti1/2)O3 Ceramics
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概要
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The microwave dielectric properties and microstructures of La(Co1/2Ti1/2)O3 ceramics prepared by the conventional solid-state route have been studied. The prepared La(Co1/2Ti1/2)O3 was a mixture of Co and Ti showing a $1:1$ order in the B-site. Doping with CuO (up to 0.75 wt %) can effectively promote the densification of La(Co1/2Ti1/2)O3 ceramics at a low sintering temperature. At 1380°C, La(Co1/2Ti1/2)O3 ceramics with 0.25 wt % CuO addition possesses a dielectric constant ($\varepsilon_{\text{r}}$) of 29.8, a $Q\times f$ of 64000 GHz (at 8 GHz) and a temperature coefficient of resonant frequency ($\tau_{\text{f}}$) of $-56$ ppm/°C. The CuO-doped La(Co1/2Ti1/2)O3 ceramics can have applications in microwave devices requiring low sintering temperatures.
- 2006-02-15
著者
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Huang Cheng-liang
Department Of Electrical Enggineering National Cheng-kung University
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Tseng Ching-fang
Department Of Electrical Engineering National Cheng Kung University
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Huang Cheng-Liang
Department of Electrical Engineering, National Cheng Kung University, No. 1 University Rd., Tainan 70101, Taiwan
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