Microwave Dielectric Characteristics of Zr0.8Sn0.2TiO4 Ceramics with WO3 Additives

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概要

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• The effects of low-level WO3 addition (up to 6 wt %) on the microstructures and microwave dielectric properties of Zr0.8Sn0.2TiO4 ceramics have been investigated. A second phase was not observed in Zr0.8Sn0.2TiO4 ceramics with 2–6 wt % WO3 added. Degradation in dielectric constant ($ \varepsilon_{\text{r}}$) occurred for the doped Zr0.8Sn0.2TiO4 ceramics owing to the formation of a grain boundary phase. Moreover, the temperature coefficient of resonant frequency ($ \tau_{\text{f}}$) was not significantly affected, while the unloaded quality factor $Q$ was effectively increased by WO3 addition. An $ \varepsilon_{\text{r}}$ of 33.4, a $Q \times f$ of 56000 GHz, and $ \tau_{\text{f}}$ of 0 ppm/°C were obtained for 4 wt % WO3-doped Zr0.8Sn0.2TiO4 ceramic sintered at 1400 °C for 3 h.

• 2006-04-15

著者

• Hsu Cheng-hsing

  Department Of Electrical Engineering National United University

• Wei Chung-chuang

  Department Of Electrical Engineering National Cheng Kung University

• Huang Cheng-liang

  Department Of Electrical Enggineering National Cheng-kung University

• Tseng Ching-fang

  Department Of Electrical Engineering National Cheng Kung University

• Wei Chung-Chuang

  Department of Electrical Engineering, National Cheng Kung University, No. 1 University Rd., Tainan 70101, Taiwan

• Tseng Ching-Fang

  Department of Electrical Engineering, National Cheng Kung University, No. 1 University Rd., Tainan 70101, Taiwan

• Hsu Cheng-Hsing

  Department of Electrical Engineering, National United University, No. 1 Lien-Da, Kung-Ching Li, Miao-Li 36003, Taiwan

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