Microwave Dielectric Properties and Microstructures of V2O5-Modified Zr0.8Sn0.2TiO4 Ceramics

概要

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The effects of V2O5 addition on the microwave dielectric properties and the microstructures of (Zr0.8, Sn0.2)TiO4 ceramics have been investigated. It is found that low-level doping of ZnO (1 wt%) and V2O5 (up to 2 wt%) can significantly improve the densification ability and the dielectric properties of (Zr0.8, Sn0.2)TiO4 ceramics. (Zr0.8, Sn0.2)TiO4 ceramics with additives could be sintered to a theoretical density higher than 95% at 1300°C due to the liquid-phase effect of V2O5 addition. The dielectric constant ($\varepsilon_{\text{r}}$) increased with increasing sintering temperature and saturated at 1300°C. The temperature coefficient of resonant frequency ($\tau_{\text{f}}$) was not significantly affected while the unloaded quality factor $Q$ was promoted by V2O5 addition. The $\varepsilon_{\text{r}}$ value of 37.3, the $Q\times f$ value of 51500 (at 7 GHz) and the $\tau_{\text{f}}$ value of ${-}2.1$ ppm/°C were obtained for the 1 wt% ZnO-doped (Zr0.8, Sn0.2)TiO4 ceramics with 1 wt% V2O5 addition sintered at 1300°C.
Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
2001-02-15