Low-Temperature Sintering and Microwave Dielectric Properties of (1 - x)MgTiO_3-xCaTiO_3 Ceramics Using Bismuth Addition
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概要
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The effects of bismuth addition on the microwave dielectric properties of (1-x)MgTiO_3-xCaTiO_3 ceramics were investigated. MgTiO_3-CaTiO_3 (hereafter referred to as MCT) ceramics was prepared by the conventional solid-state method. With a small amount of Bi_2O_3 addition, the sintering temperature of MCT ceramics can be effectively lowered without degrading the dielectric properties at microwave frequency. At a constant Mg/Ca ratio, the Q × f values are strongly dependent on the amount of Bi_2O_3 addition and decrease with increasing bismuth content owing to the decrease of density, while the ε_r value only shows a small increase. In the (1-x)MgTiO_3-xCaTiO_3 system, the microwave dielectric properties could be controlled by varying x. At 1250℃, 0.94MgTiO_3-0.06CaTiO_3 ceramics with 0.2mol% Bi_2O_3 addition gives a dielectric constant ε_r of 22.6, a Q × f value of 53000 (7GHz) and a τ_f value of -2.9ppm/℃. [DOI: 10.1143/JJAP.41.707]
- 社団法人応用物理学会の論文
- 2002-02-15
著者
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Huang Cheng-liang
Department Of Electrical Enggineering National Cheng-kung University
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PAN Chung-Long
Department of Electrical Engineering, National Cheng-Kung University
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Pan Chung-long
Department Of Electrical Engineering National Cheng-kung University
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Pan Chung-ong
Department of Electrical Engineering, National Cheng-Kung University
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