Defect-Induced Charge Freezing on Epitaxial Fe3O4(001) Film Surfaces Studied by Spin-Polarized Scanning Tunneling Microscopy
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概要
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We report the role of atom defects on the charge freezing of Fe3O4(001) surfaces studied by spin-polarized scanning tunneling microscopy (SP-STM) using a Ni tip. Epitaxially grown Fe3O4(001) films on a MgO(001) substrate were used as samples. Atomically flat surfaces are obtained by annealing in an ultrahigh vacuum and in oxygen. The surfaces exhibit a $(\sqrt{2}\times\sqrt{2})R45$° reconstruction as revealed by STM with a W tip. STM images indicate surface termination at B-sites. An atomic structure with a 0.3 nm periodicity is observed within the cation rows that are aligned along the [110] direction. SP-STM images show a pronouncedly different periodicity of 1.2 nm on areas having surface defects such as cation vacancies. This corrugation with a 1.2 nm periodicity can be attributed to a charge localization of Fe3+ and Fe2+ ions that are trapped by cation vacancies and then isolated from the electron hopping process. The results also indicate the important role of oxygen vacancies in modifying the 1.2 nm periodicity.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-07-15
著者
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SUEOKA Kazuhisa
Graduate school of Engineering, Hokkaido University, PRESTO, Japan Science and Technology Corporatio
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Subagyo Agus
Graduate School of Engineering, Hokkaido University, Kita-13 Nishi-8, Kita-ku, Sapporo 060-8628, Japan
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Subagyo Agus
Graduate School of Information Science and Technology, Hokkaido University, Kita 14, Nishi 9, Kita-ku, Sapporo 060-0814, Japan
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Sueoka Kazuhisa
Graduate School of Engineering, Hokkaido University, Kita-13 Nishi-8, Kita-ku, Sapporo 060-8628, Japan
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